包装：盒 描述：UTILITY STAPLE STARTER 工具 专用工具

N-channel 100 V, 6.8 mΩ typ., 80 A STripFET™ F7 Power MOSFETs in D2PAK, DPAK, TO-220FP, I2PAK and TO-220 packages

Features • Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness Applications • Switching applications Description These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trenc

N-CHANNEL 30V - 0.0026 W -100A D짼PAK/I짼PAK/TO-220 STripFET??II POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkab

N-CHANNEL 40V - 0.0043ohm - 120A TO-220/D2PAK/I2PAK STripFET??II POWER MOSFET

DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a rema

AEC-Q101 qualified

DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a rema

N-CHANNEL 40V - 0.0036 ohm - 100A TO-220 STripFET??II POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarka

Isc N-Channel MOSFET Transistor

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N-channel 100 V, 0.0068 廓 typ., 80 A, STripFET??VII DeepGATE??Power MOSFET in D2PAK, DPAK, TO-220FP and TO-220

文件：1.6682 Mbytes Page：23 Pages

N-Channel MOSFET uses advanced trench technology

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N沟道100 V、0.0068 Ohm典型值、80 A STripFET F7功率MOSFET，TO-220封装

N沟道60 V、4.7 mOhm典型值、100 A STripFET F7功率MOSFET，TO-220封装

High avalanche ruggedness

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isc N-Channel MOSFET Transistor

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High avalanche ruggedness

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Isc N-Channel MOSFET Transistor

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N沟道80 V、0.008 Ohm典型值、100 A STripFET F6功率MOSFET，TO-220封装

N-channel 30V - 0.0026ohm - 100A - D2PAK/I2/TO-220 STripFET TM III Power MOSFET

文件：461.83 Kbytes Page：15 Pages

N-channel 40V - 0.0043ohm - 120A - TO-220 - D2PAK STripFET TM II Power MOSFET

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N-Channel 40-V (D-S) MOSFET

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SHIELDED SMT POWER INDUCTORS

● FEATURE Various high power inductor are Superior to be high saturation for surface mounting ● APPLICATIONS 2 DC/DC converter power supply, Telecommunication equipment

Precision Wirewound Resistors

100 Series / SM Series / PC Series • Resistances to 6 Megohms • Resistance Tolerances to ±0.005 • Temperature Coeffcients of ±2 ppm/°C • High TCR Available (Balco & Platinum Wire) • 100 Acceptance Tested / Traceable to NIST • Long Term Stability / 100ppm/year • Matched Resistance Sets t

1.3 Watts Axial Leaded Zener Diodes

VOLTAGE RANGE: 2.4 - 200V POWER: 1.3Wa t t s Features ● Complete Voltage Range 2.4 to 200 Volts ● High peak reverse power dissipation ● High reliability ● Low leakage current

100/200

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TOGGLE SWITCHES - MINIATURE

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