| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
STOE30G12 | High Efficiency Thyristor Discretes 文件：440.18 Kbytes Page：3 Pages | SIRECTIFIER 矽莱克电子 |   | |
STOE30G12 | 晶闸管分立器件 | SIRECTIFIER 矽莱克电子 | | |
1200 V, 30 A power Schottky high surge silicon carbide diode Features • None or negligible reverse recovery • Switching behavior independent of temperature • Robust high voltage periphery • Operating Tj from -55 °C to 175 °C • Avalanche energy rated • ECOPACK2 compliant component | STMICROELECTRONICS 意法半导体 | | ||
Automotive 1200 V, 30 A power Schottky high surge silicon carbide diode Features • AEC-Q101 qualified and PPAP capable • None or negligible reverse recovery • Switching behavior independent of temperature • Robust high voltage periphery • Operating Tj from -55 °C to 175 °C • Avalanche energy rated • ECOPACK2 compliant component | STMICROELECTRONICS 意法半导体 | | ||
Automotive 1200 V, 30 A power Schottky high surge silicon carbide diode Features • AEC-Q101 qualified and PPAP capable • None or negligible reverse recovery • Switching behavior independent of temperature • Robust high voltage periphery • Operating Tj from -55 °C to 175 °C • Avalanche energy rated • ECOPACK2 compliant component | STMICROELECTRONICS 意法半导体 | | ||
High Voltage Silicon Rectifier Diode 文件：519.11 Kbytes Page：2 Pages | GETEDZGETAI ELECTRONICS DEVICE CO., LTD 格特电子广州市格特电子有限公司 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
2511 |
QFP-48 |
16900 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
ST |
25+ |
QFP-48 |
16900 |
原装，请咨询 |
|||
VISHAY/威世 |
23+ |
NA |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
ST |
22+ |
N/A |
50000 |
只做原装正品 |
|||
24+ |
N/A |
60000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
VISHAY/威世 |
23+ |
NA |
50000 |
全新原装正品现货,支持订货 |
|||
ST |
26+ |
QFP-48 |
60000 |
只有原装 可配单 |
|||
SPI |
22+ |
BGA |
3000 |
原装正品,支持实单 |
|||
UnitedAutomation |
24+ |
NA |
3691 |
进口原装正品优势供应 |
|||
ST |
23+ |
TO-220 |
16900 |
正规渠道,只有原装! |
STOE30G12规格书下载地址
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DdatasheetPDF页码索引
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