N-channel 650 V, 53 m typ., 55 A MDmesh DM6 Power MOSFET in a TO‑LL package

Features • Fast-recovery body diode • Lower RDS(on) per area vs previous generation • Low gate charge, input capacitance and resistance • 100 avalanche tested • Extremely high dv/dt ruggedness • Zener-protected • Excellent switching performance thanks to the extra driving source pin Desc

N沟道650 V、53 mOhm典型值、55 A MDmesh DM6功率MOSFET，TO-LL封装

Automotive-grade N-channel 650 V, 35 m typ., 64 A MDmesh DM6 half-bridge topology Power MOSFET in an ACEPACK SMIT package

Features • AQG 324 qualified • Half-bridge power module • 650 V blocking voltage • Fast recovery body diode • Very low switching energies • Low package inductance • Dice on direct bond copper (DBC) substrate • Low thermal resistance • Isolation rating of 3.4 kVrms/min Description This

N-channel 650 V, 51 m typ., 55 A MDmesh DM6 Power MOSFET in a TO-247 long leads package

Features • Fast-recovery body diode • Lower RDS(on) per area vs previous generation • Low gate charge, input capacitance and resistance • 100 avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM

Automotive-grade N-channel 650 V, 33 m typ., 72 A MDmesh DM6 Power MOSFET in a TO-247 long leads package

Features • AEC-Q101 qualified • Fast-recovery body diode • Lower RDS(on) per area vs previous generation • Low gate charge, input capacitance and resistance • 100 avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Description This high-voltage N-channel Power MOSFET is