HIGH CURRENT, HIGH PERFORMANCE, LOW VOLTAGE PNP TRANSISTOR

Description The device is manufactured in low voltage PNP Planar Technology by using a “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Features ■ VERY LOW COLLECTOR TO EMITTER SATURATION VOLTAGE ■ D.C. CURRENT GAI

封装/外壳：TO-261-4，TO-261AA 包装：管件 描述：TRANS PNP 30V 5A SOT223 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

HIGH CURRENT, HIGH PERFORMANCE, LOW VOLTAGE PNP TRANSISTOR

N Channel Enhancement Mode MOSFET

DESCRIPTION STN8882D is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The STN8882D has been designed specially to improve the overall efficiency of DC/DC converters using either synchronous or conventional swi

Tranch MOSFET

Surface mount inductors

Features • Low profile (1.5mm typ. Height) and 3.3mm square • Ideal for IC inverter EL lamp driver applications • Available on tape and reel for auto-insertion • Suitable for reflow solding

Model 888,887 18&20 pin Dual In-Line Thick Film Resistor Network

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Female mini-plus cordset

文件：133.86 Kbytes Page：3 Pages

Female mini-plus cordset

文件：133.86 Kbytes Page：3 Pages

Female mini-plus cordset

文件：133.86 Kbytes Page：3 Pages