DESCRIPTION

STN8882D is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The STN8882D has been designed specially to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

FEATURE

● 30V/ 35A, RDS(ON) = 5mΩ

@VGS = 10V

● 30V/35A, RDS(ON) = 7mΩ

@VGS = 4.5V

● Super high density cell design for

extremely low RDS(ON)

● Exceptional on-resistance and

maximum DC current capability

● TO-252,TO-251 package design