MEDIUM CURRENT, HIGH PERFORMANCE, LOW VOLTAGE PNP TRANSISTOR

Description The device in manufactured in low voltage PNP planar technology by using a “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Features ■ Very low collector to emitter saturation voltage ■ DC cur

中等电流高性能低压PNP晶体管

The device in manufactured in low voltage PNP planar technology by using a “Base Island” layout.\n\n The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. • Very low collector to emitter saturation voltage \n• 3A continuous collector current \n• DC current gain, hFE >100 \n• SOT-223 plastic package for surface mounting circuits in tape and reel packing \n• 40 V breakdown voltage V(BR)CER;

Medium current, high performance, low voltage PNP transistor

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封装/外壳：TO-261-4，TO-261AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 30V 3A SOT223 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Medium Current, High Performance, Low Voltage PNP Transistor

文件：199.59 Kbytes Page：10 Pages

Medium Current, High Performance, Low Voltage PNP Transistor

文件：199.59 Kbytes Page：10 Pages

Medium current, high performance, low voltage PNP transistor

文件：183.22 Kbytes Page：9 Pages

Complementary Plastic Silicon Power Transistors

Complementary Plastic Silicon Power Transistors . . . designed for low power audio amplifier and low–current, high speed switching applications. • High Collector–Emitter Sustaining Voltage — VCEO(sus) = 80 Vdc (Min) — BD789, BD790 = 100 Vdc (Min) — BD791, BD792 • Hi

Integrated Circuit Dual Chroma Demodulator

Description: The NTE790 has two sets of synchronous detectors with matrix circuits to achieve the R–Y, G–Y and B–Y color difference output signals. The chroma input signal is applied to Pin3 and Pin4 while the oscillator injection signal is applied to Pin6 and Pin7. The color difference signals

NPN SILICON POWER DARLINGTONS

NPN SILICON POWER DARLINGTONS ● Rugged Epitaxial Planar Construction ● 10 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C ● txo typically 320 ns, IC = 10 A

NPN SILICON POWER DARLINGTONS

NPN SILICON POWER DARLINGTONS ● Rugged Epitaxial Planar Construction ● 10 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C ● txo typically 320 ns, IC = 10 A

NPN SILICON POWER DARLINGTONS

NPN SILICON POWER DARLINGTONS ● Rugged Epitaxial Planar Construction ● 10 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C ● txo typically 320 ns, IC = 10 A