NPN SILICON POWER DARLINGTONS

NPN SILICON POWER DARLINGTONS ● Rugged Epitaxial Planar Construction ● 10 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C ● txo typically 320 ns, IC = 10 A

NPN SILICON POWER DARLINGTONS

NPN SILICON POWER DARLINGTONS ● Rugged Epitaxial Planar Construction ● 10 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C ● txo typically 320 ns, IC = 10 A

NPN SILICON POWER DARLINGTONS

N-P-N MONOLITHIC DARLINGTON CONNECTED SILICON POWER TRANSISTORS

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NPN SILICON POWER DARLINGTONS

NPN SILICON POWER DARLINGTONS ● Rugged Epitaxial Planar Construction ● 10 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C ● txo typically 320 ns, IC = 10 A

NPN SILICON POWER DARLINGTONS

NPN SILICON POWER DARLINGTONS ● Rugged Epitaxial Planar Construction ● 10 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C ● txo typically 320 ns, IC = 10 A

Complementary Plastic Silicon Power Transistors

Complementary Plastic Silicon Power Transistors . . . designed for low power audio amplifier and low–current, high speed switching applications. • High Collector–Emitter Sustaining Voltage — VCEO(sus) = 80 Vdc (Min) — BD789, BD790 = 100 Vdc (Min) — BD791, BD792 • Hi

Integrated Circuit Dual Chroma Demodulator

Description: The NTE790 has two sets of synchronous detectors with matrix circuits to achieve the R–Y, G–Y and B–Y color difference output signals. The chroma input signal is applied to Pin3 and Pin4 while the oscillator injection signal is applied to Pin6 and Pin7. The color difference signals