Medium Current, High Performance, Low Voltage NPN Transistor

Description The device in manufactured in low voltage NPN Planar Technology by using a “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. General features ■ Very low Collector to Emitter saturation voltage ■ D.C. Cur

封装/外壳：TO-261-4，TO-261AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 30V 3A SOT223 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Fast Ethernet Cat5e Data Double-Ended Cordset

Product Description Fast Ethernet Cat5e Data Double-Ended Cordset: Male straight D-coded black M12 Standard to male straight RJ45-coded black RJ45 Field Attachable, shielded, 30 V AC / 42 V DC, 1.5 A; PUR green cable, 4-wires, 2x2x0.34 mm²

Nichrome Resistor Networks on Ceramic Substrates

• Isolated, bussed and other circuits • Thin film resistor network • 0.300” PDIP packages • RoHS compliant 

Phototransistor Optocoupler Miniflat SOP Package

FFEATURES • Current Transfer Ratios – SFH690AT, 50%–150% – SFH690BT, 100%–300% – SFH690ABT, 50%–300% • SOP (Small Outline Package) • Isolation Test Voltage, 3750 V RMS (1.0 s) • High Collector-Emitter Breakdown Voltage, V CEO =70 V • Low Saturation Voltage •

UL Certified - Certificate Number 20120419-E349017 High Intensity LED Panel Indicator

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High Accuracy Systems

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