Description

The device in manufactured in low voltage NPN Planar Technology by using a “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage.

General features

■ Very low Collector to Emitter saturation voltage

■ D.C. Current gain, hFE >100

■ 3A continuous collector current

■ 40V breakdown voltage (V(BR)CER)

■ In compliance with the 2002/93/EC European Directive

Applications

■ Power management in portable equipment

■ Voltage regulation in bias supply circuits

■ Switching regulator in battery charger applications

■ Heavy load driver