STN6335 is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

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STN6335 is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

SINGLE CHIP ADSL TO ETHERNET CPE ROUTER

FEATURES • Low-cost, high-performance, single-chip ADSL CPE router and modem solution • G.992.1/G.992.2/G.992.3 and T1.413 compliant with world-wide support for Annex A, B, C, RE-ADSL, and SADSL deployments • High-performance MIPS32™ CPU to support high data rate throughput applications

0.5W Zener Diode

Features Sharp Reverse Characteristics Low Reverse Current Levels High Reliability Gold Back Metal High Reliability Tested Grades.

Primary side control high precision constant current/constant voltage PWM power switch

features Constant voltage and constant current control Full voltage output voltage accuracy can reach ±5 ±1 Internal Reference Built-in high voltage MOSFET Primary side control mode, no need for TL431 and optocoupler Flyback Topology in Discontinuous Mode With soft start function frequency

20V N & P-Channel PowerTrench MOSFETs

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use in small switching regulators, providing an extremely low RDS(ON) and gate c

10Base-T Isolation Transformer

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