N - CHANNEL 800V - 16 ohm - 0.2A - SOT-223 PowerMESH] MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per

N - CHANNEL 800V - 16 ohm - 0.2A - SOT-223 PowerMESH] MOSFET

General Purpose Rectifiers(800V 1A)

Feature • Small-SMD or • Small-DIP

1 AMP MINIATURE BRIDGE RECTIFIERS

1. Glass Passivated for high reliability/temperature performan 2. RV Ratings from 50 to 1000 Volts 3. Surge overload rating to 30 Amps peak 4. Reliable low cost molded plastic construction 5. Ideal for printed circuit board applications

N - CHANNEL 800V - 16ohm - 1A - DPAK/IPAK PowerMESH MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY™ Process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per

N - CHANNEL 800V - 16ohm - 1A - IPAK PowerMESH MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per

Bridge Diode

文件：304.22 Kbytes Page：4 Pages