位置:首页 > IC中文资料第6251页 > RFL1N20L
型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
---|---|---|---|---|
RFL1N20L | N-Channel Logic Level Power Field-Effect Transistors (L2 FET) The RFL1N18L and RFL1N20L and the RFP2N18L and RFP2N20L are n-channel enhancement-mode silicon-gate power, field-effect transistors specifically designed for use with logic level (5 volt) driving sources In applications such as programmable controllers, automotive switching, and solenoid drivers. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | ||
RFL1N20L | N-Channel Logic Level Power Field-Effect Transistors (L2 FET) 文件:92.71 Kbytes Page:2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | ||
RFL1N20L | 1A 120V AND 150V 1.900 OHM LOGIC LEVEL N-CHANNEL POWER MOSFETS | NJS | ||
1A, 180V and 200V, 3.65 Ohm, N-Channel Power MOSFETs Description These are N-channel enhancement mode silicon-gate power field-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate-drive | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
1A, 180V and 200V, 3.65 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive | Intersil | |||
General Purpose Rectifiers(200V 1A) FEATURES ● High voltage ● High reliability with superior moisture resistance ● 5 mm pitch mounting applicable APPLICATION ● Conventional Rectification ● Power source(Power Supply) ● Home Appliances, Office Equipment ● Telecommunication, Factory Automation | SHINDENGEN | |||
N-channel 200 V, 1.2 Ω, 1 A, SOT-223 MESH OVERLAY™ Power MOSFET Description This device is an N-channel Power MOSFET developed using the latest high voltage MESH OVERLAY™ process. The new patented STrip layout coupled with the company’s proprietary edge termination structure, makes it suitable in converters for lighting applications. Features ■ 100 a | STMICROELECTRONICS 意法半导体 |
RFL1N20L产品属性
- 类型
描述
- 型号
RFL1N20L
- 功能描述
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 1A I(D) | TO-39
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
NF |
NEW |
MICROBGA |
19726 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
|||
HARRIS(哈利斯) |
20+ |
TO-205AF(TO-39) |
3000 |
||||
INTERSIL |
CAN3 |
8650 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
24+ |
5000 |
公司存货 |
|||||
HARRIS |
23+ |
CAN |
5000 |
原装正品,假一罚十 |
|||
HARRIS |
2447 |
TO78 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
TI |
SOP |
2542 |
只做进口原装!假一赔百!自己库存价优! |
||||
H |
24+ |
CAN |
200 |
进口原装正品优势供应 |
|||
HARRIS |
专业铁帽 |
CAN3 |
67500 |
铁帽原装主营-可开原型号增税票 |
|||
ISL |
TO78 |
3751 |
专营CAN铁帽仔 |
RFL1N20L规格书下载地址
RFL1N20L参数引脚图相关
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RFL1N20L数据表相关新闻
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2019-9-24
DdatasheetPDF页码索引
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