High voltage fast-switching NPN power transistor

Description The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and medium voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is design

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 400V 4A DPAK 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Customer Specification

Construction Diameters (In) 1) Component 1 8 X 1 COND a) Conductor 24 (7/32) AWG Bare Copper 0.024 b) Insulation 0.010 Wall, Nom. PVC, Semi Rigid 0.044 (1) Color(s) Cond Color Cond Color Cond Color 1 WHITE 4 YELLOW 7 BLUE 2 BROWN 5 SLATE 8 RED 3 GREEN 6 PINK 2) Cable Assembly 8 Component

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