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丝印代码:85N15F4;N-channel 150 V, 0.015 Ω, 85 A TO-220, H2PAK STripFET™ DeepGATE™ Power MOSFET

Features ■ Extremely low on-resistance RDS(on) ■ 100 avalanche tested Application ■ Switching applications Description This STripFET™ DeepGATE™ Power MOSFET technology is among the latest improvements, which have been especially tailored to minimize on-state resistance, with a new gat

STMICROELECTRONICS

意法半导体

丝印代码:85N15F4;N-channel 150 V, 0.015 Ω, 85 A TO-220, D2PAK STripFET™ DeepGATE™ Power MOSFET

Features ■ Exceptional dv/dt capability ■ Extremely low on-resistance RDS(on) ■ 100 avalanche tested Application ■ Switching applications Description This Power MOSFET is among the latest developments that use an advanced technology (STripFET™ DeepGATE™ technology), which has been es

STMICROELECTRONICS

意法半导体

丝印代码:85N15F4;N-channel 150 V, 0.015 Ω, 85 A TO-220, D2PAK STripFET™ DeepGATE™ Power MOSFET

Features ■ Exceptional dv/dt capability ■ Extremely low on-resistance RDS(on) ■ 100 avalanche tested Application ■ Switching applications Description This Power MOSFET is among the latest developments that use an advanced technology (STripFET™ DeepGATE™ technology), which has been es

STMICROELECTRONICS

意法半导体

丝印代码:85N15F4;N-channel 150 V, 0.015 Ω, 85 A TO-220, H2PAK STripFET™ DeepGATE™ Power MOSFET

Features ■ Extremely low on-resistance RDS(on) ■ 100 avalanche tested Application ■ Switching applications Description This STripFET™ DeepGATE™ Power MOSFET technology is among the latest improvements, which have been especially tailored to minimize on-state resistance, with a new gat

STMICROELECTRONICS

意法半导体

更新时间:2026-7-31 18:45:00
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