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型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
STH7NA80FI | N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 1.68 Ω ■ ± 30V GATE TO SOURCE VOLTAGE RATING ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100oC ■ LOW INTRINSIC CAPACITANCES ■ GATE CHARGE MINIMIZED ■ REDUCED THRESHOLD VOLTAGE SPREAD APPLICATIONS ■ HIGH C | STMICROELECTRONICS 意法半导体 | ||
STH7NA80FI | N- CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR N- CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR ■ TYPICAL Ros(on) = 1.68 Ω ■ ± 30V GATE TO SOURCE VOLTAGE RATING ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW INTRINSIC CAPACITANCES ■ GATE CHARGE MINIMIZED ■ REDUCED THRESHOLD VOLTAGE SPREAD APPLICATIONS ■ HIGH CU | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | ||
STH7NA80FI | N- CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR N- CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR ■ TYPICAL Ros(on) = 1.68 Ω ■ ± 30V GATE TO SOURCE VOLTAGE RATING ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW INTRINSIC CAPACITANCES ■ GATE CHARGE MINIMIZED ■ REDUCED THRESHOLD VOLTAGE SPREAD APPLICATIONS ■ HIGH CU | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | ||
STH7NA80FI | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 6.5A@ TC=25℃ ·Drain Source Voltage -VDSS=800V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.9Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | ||
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 1.68 Ω ■ ± 30V GATE TO SOURCE VOLTAGE RATING ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100oC ■ LOW INTRINSIC CAPACITANCES ■ GATE CHARGE MINIMIZED ■ REDUCED THRESHOLD VOLTAGE SPREAD APPLICATIONS ■ HIGH C | STMICROELECTRONICS 意法半导体 | |||
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 1.68 Ω ■ ± 30V GATE TO SOURCE VOLTAGE RATING ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100oC ■ LOW INTRINSIC CAPACITANCES ■ GATE CHARGE MINIMIZED ■ REDUCED THRESHOLD VOLTAGE SPREAD APPLICATIONS ■ HIGH C | STMICROELECTRONICS 意法半导体 | |||
800V N-Channel MOSFET 文件:330.2 Kbytes Page:8 Pages | PANJIT 強茂 |
STH7NA80FI产品属性
- 类型
描述
- 型号
STH7NA80FI
- 制造商
STMICROELECTRONICS
- 制造商全称
STMicroelectronics
- 功能描述
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ST |
22+ |
TO |
25000 |
只做原装进口现货,专注配单 |
|||
ST |
21+ |
TO-263 |
1200 |
只做原装,绝对现货,原厂代理商渠道,欢迎电话微信查 |
|||
STMicroelectronics |
21+ |
H2Pak-2 |
1000 |
100%进口原装!长期供应!绝对优势价格(诚信经营)! |
|||
ST(意法) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
ST |
23+ |
TO-247 |
8795 |
||||
ST |
2020+ |
TO220-2 |
300 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
ST/意法 |
23+ |
TO-247 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
24+ |
N/A |
1600 |
|||||
ST |
25+ |
TO |
35400 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
ST(意法半导体) |
2447 |
H2PAK-2 |
105000 |
1000个/圆盘一级代理专营品牌!原装正品,优势现货, |
STH7NA80FI规格书下载地址
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DdatasheetPDF页码索引
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