型号 功能描述 生产厂家 企业 LOGO 操作
STH7NA80FI

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 1.68 Ω ■ ± 30V GATE TO SOURCE VOLTAGE RATING ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100oC ■ LOW INTRINSIC CAPACITANCES ■ GATE CHARGE MINIMIZED ■ REDUCED THRESHOLD VOLTAGE SPREAD APPLICATIONS ■ HIGH C

STMICROELECTRONICS

意法半导体

STH7NA80FI

N- CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

N- CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR ■ TYPICAL Ros(on) = 1.68 Ω ■ ± 30V GATE TO SOURCE VOLTAGE RATING ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW INTRINSIC CAPACITANCES ■ GATE CHARGE MINIMIZED ■ REDUCED THRESHOLD VOLTAGE SPREAD APPLICATIONS ■ HIGH CU

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

STH7NA80FI

N- CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

N- CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR ■ TYPICAL Ros(on) = 1.68 Ω ■ ± 30V GATE TO SOURCE VOLTAGE RATING ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW INTRINSIC CAPACITANCES ■ GATE CHARGE MINIMIZED ■ REDUCED THRESHOLD VOLTAGE SPREAD APPLICATIONS ■ HIGH CU

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

STH7NA80FI

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 6.5A@ TC=25℃ ·Drain Source Voltage -VDSS=800V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.9Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

STH7NA80FI

N- CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

ETC

知名厂家

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 1.68 Ω ■ ± 30V GATE TO SOURCE VOLTAGE RATING ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100oC ■ LOW INTRINSIC CAPACITANCES ■ GATE CHARGE MINIMIZED ■ REDUCED THRESHOLD VOLTAGE SPREAD APPLICATIONS ■ HIGH C

STMICROELECTRONICS

意法半导体

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 1.68 Ω ■ ± 30V GATE TO SOURCE VOLTAGE RATING ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100oC ■ LOW INTRINSIC CAPACITANCES ■ GATE CHARGE MINIMIZED ■ REDUCED THRESHOLD VOLTAGE SPREAD APPLICATIONS ■ HIGH C

STMICROELECTRONICS

意法半导体

800V N-Channel MOSFET

文件:330.2 Kbytes Page:8 Pages

PANJIT

強茂

STH7NA80FI产品属性

  • 类型

    描述

  • 型号

    STH7NA80FI

  • 制造商

    STMICROELECTRONICS

  • 制造商全称

    STMicroelectronics

  • 功能描述

    N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

更新时间:2026-1-28 16:59:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST(意法)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
STMicroelectronics
21+
H2Pak-2
1000
100%进口原装!长期供应!绝对优势价格(诚信经营)!
ST/意法半导体
21+
H2PAK-2
8860
只做原装,质量保证
ST
06+
TO-247
2000
原装库存
ST
22+
TO-263
12245
现货,原厂原装假一罚十!
ST
26+
TO-247
8795
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订
ST
25+
TO
35400
独立分销商 公司只做原装 诚心经营 免费试样正品保证
24+
N/A
1600
ST
25+
TO220-2
300
百分百原装正品 真实公司现货库存 本公司只做原装 可
ST/意法半导体
24+
H2PAK-2
6000
全新原装深圳仓库现货有单必成

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