SCHOTTKY RECTIFIER

 150 °C TJ operation  Ultralow forward voltage drop  High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance  High frequency operation  Guard ring for enhanced ruggedness and long term reliability  Trench MOS Schottky technology  Thi

封装/外壳：TO-220-3 全封装，隔离接片 包装：散装 描述：DIODE SCHOTTKY 120V ITO220AB 分立半导体产品 二极管 - 整流器 - 阵列

超低正向肖特基二极管

肖特基二极管

SCHOTTKY RECTIFIER

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1200 V αSiC Silicon Carbide Schottky Barrier Diode

Features • Proprietary αSiC Schottky Barrier Diode technology • Negligible reverse recovery current • Maximum operating junction temperature of 175°C • Improved switching losses vs. Si bipolar diodes • Positive temperature coefficient for ease of paralleling Applications Renewable Industr

LOW VF SCHOTTKY RECTIFIER

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LOW VF SCHOTTKY RECTIFIER

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Ultra low forward voltage drop, low power loss

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Ultra low forward voltage drop, low power loss

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