N-channel800V,0.400Ωtyp.,12AMDmesh™K5PowerMOSFETsinTO-220FPandI²PAKFPpackages

Features Industry’slowestRDS(on)xarea Industry’sbestfigureofmerit(FoM) Ultra-lowgatecharge 100avalanchetested Zener-protected Applications Switchingapplications Description TheseveryhighvoltageN-channelPower MOSFETaredesignedusingMDmesh™K5 technol

N-channel800V,0.400Ωtyp.,12AMDmesh™K5PowerMOSFETinaD²PAKpackage

Features Industry’slowestRDS(on)xarea Industry’sbestfigureofmerit(FoM) Ultra-lowgatecharge 100avalanchetested Zener-protected Applications Switchingapplications Description ThisveryhighvoltageN-channelPower MOSFETisdesignedusingMDmesh™K5 tec

N-channel800V,0.400Ωtyp.,12AMDmesh™K5PowerMOSFETsinTO-220FPandI²PAKFPpackages

Features Industry’slowestRDS(on)xarea Industry’sbestfigureofmerit(FoM) Ultra-lowgatecharge 100avalanchetested Zener-protected Applications Switchingapplications Description TheseveryhighvoltageN-channelPower MOSFETaredesignedusingMDmesh™K5 technol

N-channel800V,0.400Ωtyp.,12AMDmesh™K5PowerMOSFETinaTO-220FPultranarrowleadspackage

Features •Industry’slowestRDS(on)xarea •Industry’sbestFoM(figureofmerit) •Ultra-lowgatecharge •100avalanchetested •Zener-protected Applications •Switchingapplications Description ThisveryhighvoltageN-channelPowerMOSFETisdesignedusingMDmesh™K5 technology

N-channel800V,0.400Ωtyp.,12AMDmesh™K5PowerMOSFETinaTO-220package

Features Industry’slowestRDS(on)xarea Industry’sbestFoM(figureofmerit) Ultra-lowgatecharge 100avalanchetested Zener-protected Applications Switchingapplications Description ThisveryhighvoltageN-channelPower MOSFETisdesignedusingMDmesh™K5 technolog