Extremely low gate charge

Description These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=7.0A@ TC=25℃ ·Drain Source Voltage -VDSS=650V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.68Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N沟道650 V、0.60 Ohm典型值、7 A MDmesh M2功率MOSFET，DPAK封装

These devices are N-channel Power MOSFETs developed using the MDmesh M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters • Extremely low gate charge \n• Excellent output capacitance (COSS) profile \n• 100% avalanche tested \n• Zener-protected;

Extremely low gate charge

Description These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They

Extremely low gate charge

Description These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They

Extremely low gate charge

文件：741.12 Kbytes Page：15 Pages

Extremely low gate charge

文件：741.12 Kbytes Page：15 Pages