Extremely low gate charge

Description These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=7.0A@ TC=25℃ ·Drain Source Voltage -VDSS=650V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.68Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N沟道650 V、0.60 Ohm典型值、7 A MDmesh M2功率MOSFET，DPAK封装

N-channel 650 V, 0.60 typ., 7 A MDmesh M2 Power MOSFET in a TO-220FP ultra narrow leads package

Features • Extremely low gate charge • Excellent output capacitance (COSS) profile • 100 avalanche tested • Zener-protected Description This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device

Extremely low gate charge

文件：741.12 Kbytes Page：15 Pages

Extremely low gate charge

文件：741.12 Kbytes Page：15 Pages