HiPerFET Power MOSFETs Single Die MOSFET

HiPerFET Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Features • Conforms to SOT-227B outline • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance • F

HiPerFET Power MOSFETs Single Die MOSFET

N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Features • International standard packages • miniBLOC, with Aluminium nitride isolation • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductanc

HiPerFET Power MOSFETs Single Die MOSFET

N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Features • International standard packages • miniBLOC, with Aluminium nitride isolation • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductanc

PolarHV HiPerFET Power MOSFET

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features • Fast intrinsic diode • International standard package • Unclamped Inductive Switching (UIS) rated • UL recognized. • Isolated mounting base Advantages • Easy to mount • Space savings • High power density

PolarHV HiPerFET Power MOSFET

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