N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE

HIGH CURRENT POWER MODULE ■ AVALANCHE RUGGED TECHNOLOGY (SEE STH12N60 FOR RATING) ■ VERY LARGE SOA - LARGE PEAK POWER CAPABILITY ■ EASY TO MOUNT ■ SAME CURRENT CAPABILITY FOR THE TWO SOURCE TERMINALS ■ EXTREMELY LOW Rth JUNCTION TO CASE ■ VERY LOW DRAIN TO CASE CAPACITANCE ■ VERY LOW INT

SMPS MOSFET

Features and Benefits ● SuperFast body diode eliminates the need for external diodes in ZVS applications ● Lower Gate Charge Results in Simple Drive Requirements ● Enhanced dV/dt capabilities offer improved ruggedness ● Higher Gate voltage threshold offers improved noise immunity Applications

Lower Gate Charge Results in Simple Drive Requirements

FEATURES • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications • Lower Gate Charge Results in Simple Drive Requirements • Enhanced dV/dt Capabilities Offer Improved Ruggedness • Higher Gate Voltage Threshold Offers Improved Noise Immunity • Compliant to RoHS Direc

N-Channel Enhancement Mode MOSFET

文件：251.17 Kbytes Page：4 Pages

N-Channel Super Junction Power MOSFET

文件：600.95 Kbytes Page：6 Pages

HEXFET Power MOSFET

文件：200.08 Kbytes Page：9 Pages