Features

• Worldwide best RDS(on) x area

• Worldwide best FOM (figure of merit)

• Ultra low gate charge

• 100% avalanche tested

• Zener-protected

Applications

• Flyback converter

• Adapters for tablets, notebook and AIO

• LED lighting

Description

This very high voltage N-channel Power MOSFET is designed using the ultimate

MDmesh K6 technology based on 20 years STMicroelectronics experience on super

junction technology. The result is the best-in-class on-resistance per area and gate

charge for applications requiring superior power density and high efficiency.