Ultra-low gate charge

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N沟道900 V、0.91 Ohm典型值、6 A MDmesh K5功率MOSFET，DPAK封装

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 6.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 900V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.1Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

N-channel 900 V, 0.91 廓 typ., 6 A MDmesh??K5 Power MOSFET in a TO-220FP package

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N-channel 900 V, 0.91 廓 typ., 6 A MDmesh??K5 Power MOSFET in an I짼PAK package

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N-channel 900 V, 0.91 廓 typ., 6 A MDmesh??K5 Power MOSFET in a TO-220 package

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