丝印代码：D5NK50Z；N-channel 500 V, 1.22 Ω typ., 4.4 A SuperMESH™ Power MOSFETs in I2PAK, DPAK, TO‑220, TO‑220FP and IPAK packages

Features • 100 avalanche tested • Gate charge minimized • Very low intrinsic capacitance • Zener-protected Applications • Switching applications Description These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelect

N沟道500 V、1.22 Ohm典型值、4.4 A SuperMESH功率MOSFET，DPAK封装

These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv • 100% avalanche tested \n• Gate charge minimized \n• Very low intrinsic capacitance \n• Zener-protected;

丝印代码：D5NK50Z；N-CHANNEL 500V - 1.22廓 - 4.4A TO-220/FP-D/IPAK-D2/I2PAK Zener-Protected SuperMESH?줞OSFET

文件：452.27 Kbytes Page：17 Pages

丝印代码：B5NK50Z；N-CHANNEL 500V - 1.22廓 - 4.4A TO-220/FP-D/IPAK-D2/I2PAK Zener-Protected SuperMESH?줞OSFET

文件：452.27 Kbytes Page：17 Pages

N-Channel 650V (D-S) Power MOSFET

文件：1.10899 Mbytes Page：10 Pages