isc P-Channel MOSFET Transistor

DESCRIPTION ·Drain Source Voltage : VDSS= -30V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switch

P沟道30 V、0.01 Ohm典型值、52 A STripFET H6功率MOSFET，DPAK封装

This device is a P-channel Power MOSFET developed using the STripFET H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. • Very low on-resistance \n• Very low gate charge \n• High avalanche ruggedness \n• Low gate drive power loss;

丝印代码：52P3LLH6；P-channel 30 V, 0.01 廓 typ., 52 A, STripFET??H6 Power MOSFET in a DPAK package

文件：778.47 Kbytes Page：16 Pages