N沟道620 V、1.7 Ohm（典型值）、3.8 A、MDmesh K3功率MOSFET，采用DPAK封装

This MDmesh K3 Power MOSFET is the result of improvements applied to STMicroelectronics’ MDmesh technology, combined with a new optimized vertical structure. This device boasts an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering it suitable for the m • 100% avalanche tested \n• Extremely high dv/dt capability \n• Very low intrinsic capacitance \n• Improved diode reverse recovery characteristics \n• Zener-protected;

N-channel 620 V, 1.7 廓, 3.8 A SuperMESH3 Power MOSFET

文件：1.04984 Mbytes Page：18 Pages

N-channel 620 V, 1.7 廓 typ., 3.8 A SuperMESH3 Power MOSFET

Description These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low onresistance, superior dynamic performance and high avalanche capability, renderi

N-channel 620 V, 1.7 廓 typ., 3.8 A SuperMESH3 Power MOSFET

Description These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low onresistance, superior dynamic performance and high avalanche capability, renderi

N-Channel 650V (D-S) Power MOSFET

文件：1.07815 Mbytes Page：9 Pages

N-channel 620 V, 1.7 廓, 3.8 A SuperMESH3 Power MOSFET

文件：1.04984 Mbytes Page：18 Pages