N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

■ TYPICAL RDS(on) = 0.7 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100oC ■ APPLICATION ORIENTED CHARACTERIZATION ■ THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX ”-1”) ■ SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE &

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

6-Pin DIP Optoisolators Transistor Output

The4N25/A, 4N26, 4N27 and 4N28 devices consist of a gallium arsenide infraredemitting diode optically coupled to amonolithic silicon phototransistor detector. • Most Economical Optoisolator Choice for Medium Speed, Switching Applications • Meets or Exceeds All JEDEC Registered Specific

6-Pin DIP Optoisolators Transistor Output

The4N25/A, 4N26, 4N27 and 4N28 devices consist of a gallium arsenide infraredemitting diode optically coupled to amonolithic silicon phototransistor detector. • Most Economical Optoisolator Choice for Medium Speed, Switching Applications • Meets or Exceeds All JEDEC Registered Specific

Optocoupler with Phototransistor Output

Description The 4N25(G)V/ 4N35(G)V series consists of a photo transistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and

6-Pin DIP Optoisolators Transistor Output

The M4N25 device consists of a gallium arsenide infrared emitting diode optically coupled to a silicon NPN phototransistor detector. • Most Economical Optoisolator Choice for Medium Speed, Switching Applications • Meets or Exceeds All JEDEC Registered Specifications Applications • General Purp