N-channel 600 V, 3.3 廓, 2.4 A, DPAK SuperFREDMesh??Power MOSFET

Description The SuperFREDMesh™ series associates all advantages of reduced on-resistance, Zener gate protection and very high dv/dt capability with a fast body-drain recovery diode. Such series complements the “FDmesh™” advanced technology. Features ■ 100 avalanche tested ■ Extremely high dv/d

Power MOSFET

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N-channel 600 V, 3.3 Ω, 2.4 A, DPAK SuperFREDMesh™ Power MOSFET

N-CHANNEL 600V - 3.3ohm - 2.4A TO-220/FP/D2PAK/DPAK/IPAK Zener-Protected SuperMESH?줡ower MOSFET

DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such seri

N-channel 600 V, 3.2 Ω typ., 2.4 A SuperMESH™ Power MOSFETs in D²PAK, IPAK, DPAK, TO-220 and TO-220FP packages

Description These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, these devices are designed to ensure

N-CHANNEL 600V - 3.3ohm - 2.4A TO-220/FP/D2PAK/DPAK/IPAK Zener-Protected SuperMESH?줡ower MOSFET

DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such seri

Power MOSFET

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N-Channel 650 V (D-S) MOSFET

文件：1.08664 Mbytes Page：9 Pages