N-channel 620 V, 2.5 廓 , 2.5 A SuperMESH3??Power MOSFET DPAK, TO-220FP, TO-220, IPAK

Features ■ 100 avalanche tested ■ Extremely high dv/dt capability ■ Very low intrinsic capacitance ■ Improved diode reverse recovery characteristics ■ Zener-protected Application Switching applications Description These devices are made using the SuperMESH3™ Power MOSFET technology t

N-channel 620 V, 2.5 Ohm, 2.5 A SuperMESH3(TM) Power MOSFET DPAK

• 100% avalanche tested\n• Very low intrinsic capacitance\n• Extremely high dv/dt capability• Zener-protected\n• Improved diode reverse recovery characteristics;

Power MOSFET

文件：1.07826 Mbytes Page：9 Pages

N-channel 620 V, 2.5 廓 , 2.5 A SuperMESH3??Power MOSFE DPAK, TO-220FP, TO-220, IPAK

文件：1.19513 Mbytes Page：21 Pages

N-channel 620 V, 2.5 廓 , 2.5 A SuperMESH3??Power MOSFET DPAK, TO-220FP, TO-220, IPAK

Features ■ 100 avalanche tested ■ Extremely high dv/dt capability ■ Very low intrinsic capacitance ■ Improved diode reverse recovery characteristics ■ Zener-protected Application Switching applications Description These devices are made using the SuperMESH3™ Power MOSFET technology t

N-channel 620 V, 2.5 廓 , 2.5 A SuperMESH3??Power MOSFET DPAK, TO-220FP, TO-220, IPAK

Features ■ 100 avalanche tested ■ Extremely high dv/dt capability ■ Very low intrinsic capacitance ■ Improved diode reverse recovery characteristics ■ Zener-protected Application Switching applications Description These devices are made using the SuperMESH3™ Power MOSFET technology t

N-channel 620 V, 2.5 廓 , 2.5 A SuperMESH3??Power MOSFET DPAK, TO-220FP, TO-220, IPAK

Features ■ 100 avalanche tested ■ Extremely high dv/dt capability ■ Very low intrinsic capacitance ■ Improved diode reverse recovery characteristics ■ Zener-protected Application Switching applications Description These devices are made using the SuperMESH3™ Power MOSFET technology t

N-Channel 650 V (D-S) MOSFET

文件：1.08673 Mbytes Page：9 Pages