Features

■ 100 avalanche tested

■ Extremely high dv/dt capability

■ Very low intrinsic capacitance

■ Improved diode reverse recovery characteristics

■ Zener-protected

Application

Switching applications

Description

These devices are made using the

SuperMESH3™ Power MOSFET technology that

is obtained via improvements applied to

STMicroelectronics’ SuperMESH™ technology

combined with a new optimized vertical structure.

The resulting product has an extremely low on

resistance, superior dynamic performance and

high avalanche capability, making it especially

suitable for the most demanding applications.