P-CHANNEL 30V - 0.025ohm - 24A DPAK/IPAK STripFET??II POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance and low gate charge. ■ TYPICAL RDS(on) = 0.025Ω ■ STANDARD OUTLINE FOR EASY

P-CHANNEL 30V - 0.025 Ohm - 24A STripFET™ II POWER MOSFET

This Power MOSFET is the latest development of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance and low gate charge. Standard outline for easy automated surface mount assembly\nLow gate charge\nLow threshold device;

P-CHANNEL 30V - 0.025ohm - 24A DPAK/IPAK STripFET??II POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance and low gate charge. ■ TYPICAL RDS(on) = 0.025Ω ■ STANDARD OUTLINE FOR EASY

P-channel 30 V - 0.025 廓 - 24 A - DPAK / IPAK STripFET??II Power MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low onresistance and low gate charge. Features ■ Standard outline for easy automated surface

P-channel 30 V - 0.025 廓 - 24 A - DPAK / IPAK STripFET??II Power MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low onresistance and low gate charge. Features ■ Standard outline for easy automated surface

P-Channel 30-V (D-S) MOSFET

文件：1.73373 Mbytes Page：8 Pages

P-Channel 30-V (D-S) MOSFET

文件：1.02413 Mbytes Page：9 Pages

P-Channel 30-V (D-S) MOSFET

文件：1.89873 Mbytes Page：9 Pages