Automotive-gradeN-channel60V,0.022Ωtyp.,35ASTripFET™IIPowerMOSFETinaDPAKpackage

Features AEC-Q101qualified Lowthresholddrive Gatechargeminimized Description ThisPowerMOSFETseriesrealizedwith STMicroelectronicsuniqueSTripFET™process isspecificallydesignedtominimizeinput capacitanceandgatecharge.Itisthereforeideal asaprimaryswitchin

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR） 描述：MOSFET N-CH 60V 28A DPAK 分立半导体产品 晶体管 - FET，MOSFET - 单个

N-CHANNEL60V-0.020ohm-28AIPAK/DPAKSTripFET??IIPOWERMOSFET

DESCRIPTION ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronisuniqueSingleFeatureSize™stripbasedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemarkab

60VN-ChannelEnhancementModePowerMOSFET

GeneralDescription TheSTD30NF06usesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge. Itcanbeusedinawidevarietyofapplications. Features VDS=60V,ID=30A RDS(ON),23mΩ(Typ)@VGS=10V RDS(ON),29mΩ(Typ)@VGS=4.5V AdvancedTrenchTechnolo

60VN-ChannelEnhancementModePowerMOSFET

GeneralDescription TheSTD30NF06usesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge. Itcanbeusedinawidevarietyofapplications. Features VDS=60V,ID=30A RDS(ON),23mΩ(Typ)@VGS=10V RDS(ON),29mΩ(Typ)@VGS=4.5V AdvancedTrenchTechnology

60VN-ChannelEnhancementModePowerMOSFET

GeneralDescription TheSTD30NF06usesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge. Itcanbeusedinawidevarietyofapplications. Features VDS=60V,ID=30A RDS(ON),23mΩ(Typ)@VGS=10V RDS(ON),29mΩ(Typ)@VGS=4.5V AdvancedTrenchTechnology

N-CHANNEL60V-0.022ohm-35ADPAK/IPAKSTripFET??POWERMOSFET

DESCRIPTION ThisPowerMosfetisthelatestdevelopmentofSTMicroelectronicsunique“SingleFeatureSize™”strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalancecharacteristicsandlesscriticalalignmentstepsthereforearemar