N-CHANNEL 60V - 0.022ohm - 35A DPAK/IPAK STripFET??POWER MOSFET

DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remar

60V N-Channel Enhancement Mode Power MOSFET

General Description The STD30NF06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Features VDS = 60V,ID =30A RDS(ON),23mΩ(Typ) @ VGS =10V RDS(ON),29mΩ(Typ) @ VGS =4.5V Advanced Trench Technology

60V N-Channel Enhancement Mode Power MOSFET

General Description The STD30NF06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Features VDS = 60V,ID =30A RDS(ON),23mΩ(Typ) @ VGS =10V RDS(ON),29mΩ(Typ) @ VGS =4.5V Advanced Trench Technolo

Automotive-grade N-channel 60 V, 0.022 Ω typ., 35 A STripFET™ II Power MOSFET in a DPAK package

Features  AEC-Q101 qualified  Low threshold drive  Gate charge minimized Description This Power MOSFET series realized with STMicroelectronics unique STripFET™ process is specifically designed to minimize input capacitance and gate charge. It is therefore ideal as a primary switch in

汽车级N沟道60 V、22 mOhm典型值、35 A STripFET II功率MOSFET，DPAK封装

This Power MOSFET series realized with STMicroelectronics unique STripFET™ process is specifically designed to minimize input capacitance and gate charge. It is therefore ideal as a primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer applications. It is also • AEC-Q101 qualified \n• Low threshold drive \n• Gate charge minimized;

N-channel 60 V, 0.022 Ohm typ., 35 A STripFET II Power MOSFET in a DPAK package

This Power MOSFET has been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and compu • Low threshold drive \n• Gate charge minimized;

N-CHANNEL 60V - 0.022ohm - 35A DPAK/IPAK STripFET??POWER MOSFET

DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remar

N-Channel 60 V (D-S) MOSFET

文件：963.83 Kbytes Page：7 Pages

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR） 描述：MOSFET N-CH 60V 28A DPAK 分立半导体产品 晶体管 - FET，MOSFET - 单个

N-Channel 60-V (D-S) MOSFET

文件：898.97 Kbytes Page：6 Pages

60V N-Channel Enhancement Mode Power MOSFET

General Description The STD30NF06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Features VDS = 60V,ID =30A RDS(ON),23mΩ(Typ) @ VGS =10V RDS(ON),29mΩ(Typ) @ VGS =4.5V Advanced Trench Technology

N-CHANNEL 60V - 0.020 ohm - 28A IPAK/DPAK STripFET??II POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkab

N-CHANNEL 60V - 0.022ohm - 35A DPAK/IPAK STripFET??POWER MOSFET

DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remar