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STD30NF06L价格
参考价格：￥1.6153
型号：STD30NF06LT4 品牌：STMicroelectronics 备注：这里有STD30NF06L多少钱，2025年最近7天走势，今日出价，今日竞价，STD30NF06L批发/采购报价，STD30NF06L行情走势销售排行榜，STD30NF06L报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
STD30NF06L | N-CHANNEL 60V - 0.022ohm - 35A DPAK/IPAK STripFET??POWER MOSFET DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remar | STMICROELECTRONICS 意法半导体 |   | |
STD30NF06L | 60V N-Channel Enhancement Mode Power MOSFET General Description The STD30NF06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Features VDS = 60V,ID =30A RDS(ON),23mΩ(Typ) @ VGS =10V RDS(ON),29mΩ(Typ) @ VGS =4.5V Advanced Trench Technology | UMWGuangdong Youtai Semiconductor Co., Ltd. 友台半导体广东友台半导体有限公司 | | |
STD30NF06L | 60V N-Channel Enhancement Mode Power MOSFET General Description The STD30NF06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Features VDS = 60V,ID =30A RDS(ON),23mΩ(Typ) @ VGS =10V RDS(ON),29mΩ(Typ) @ VGS =4.5V Advanced Trench Technolo | EVVOSEMI 翊欧 | | |
60V N-Channel Enhancement Mode Power MOSFET General Description The STD30NF06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Features VDS = 60V,ID =30A RDS(ON),23mΩ(Typ) @ VGS =10V RDS(ON),29mΩ(Typ) @ VGS =4.5V Advanced Trench Technolo | EVVOSEMI 翊欧 | | ||
N-CHANNEL 60V - 0.020 ohm - 28A IPAK/DPAK STripFET??II POWER MOSFET DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkab | STMICROELECTRONICS 意法半导体 | | ||
60V N-Channel Enhancement Mode Power MOSFET General Description The STD30NF06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Features VDS = 60V,ID =30A RDS(ON),23mΩ(Typ) @ VGS =10V RDS(ON),29mΩ(Typ) @ VGS =4.5V Advanced Trench Technology | UMWGuangdong Youtai Semiconductor Co., Ltd. 友台半导体广东友台半导体有限公司 | | ||
Automotive-grade N-channel 60 V, 0.022 Ω typ., 35 A STripFET™ II Power MOSFET in a DPAK package Features AEC-Q101 qualified Low threshold drive Gate charge minimized Description This Power MOSFET series realized with STMicroelectronics unique STripFET™ process is specifically designed to minimize input capacitance and gate charge. It is therefore ideal as a primary switch in | STMICROELECTRONICS 意法半导体 | | ||
N-CHANNEL 60V - 0.022ohm - 35A DPAK/IPAK STripFET??POWER MOSFET DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remar | STMICROELECTRONICS 意法半导体 | | ||
N-Channel 60 V (D-S) MOSFET 文件：963.83 Kbytes Page：7 Pages | VBSEMI 微碧半导体 | | ||
封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR） 描述：MOSFET N-CH 60V 28A DPAK 分立半导体产品 晶体管 - FET，MOSFET - 单个 | STMICROELECTRONICS 意法半导体 | | ||
N-Channel 60-V (D-S) MOSFET 文件：898.97 Kbytes Page：6 Pages | VBSEMI 微碧半导体 | | ||
N-CHANNEL 60V - 0.022ohm - 35A DPAK/IPAK STripFET??POWER MOSFET DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remar | STMICROELECTRONICS 意法半导体 | |
STD30NF06L产品属性
- 类型
描述
- 型号
STD30NF06L
- 功能描述
MOSFET N-Ch 60 Volt 35 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
23+ |
TO-252 |
20000 |
全新原装假一赔十 |
|||
ST/意法 |
25+ |
TO-252 |
32000 |
ST/意法全新特价STD30NF06L即刻询购立享优惠#长期有货 |
|||
ST(意法) |
24+/25+ |
10000 |
原装正品现货库存价优 |
||||
ST/意法半导体 |
23+ |
TO-252-3 |
12700 |
买原装认准中赛美 |
|||
TECH PUBLIC(台舟) |
24+ |
TO-252-2 |
5000 |
诚信服务,绝对原装原盘。 |
|||
ST/意法 |
21+ |
TO-252-3 |
1773 |
只做原装,一定有货,不止网上数量,量多可订货! |
|||
ST |
25+ |
TO-252 |
4500 |
全新原装、诚信经营、公司现货销售! |
|||
NA |
23+ |
NA |
26094 |
10年以上分销经验原装进口正品,做服务型企业 |
|||
ST(意法) |
22+ |
N/A |
3206 |
原装正品物料 |
|||
ST/意法 |
24+ |
TO-252-3 |
5000 |
只做原装，欢迎询价，量大价优 |
STD30NF06L规格书下载地址
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