N-Channel E nhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● TO-252 and TO-251 Package.

N-Channel E nhancement Mode Field Effect Transistor

Silicon NPN Transistor Color TV Horizontal Deflection Output

Features: • High Speed • High Collector–Emitter Breakdown Voltage • High Reliability • On–Chip Damper Diode

N-Channel Enhancement-Mode Vertical DMOS FETs

Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the

P-Channel Enhancement-Mode Vertical DMOS FETs

Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the

Dual Adjustable Step-Down Switching Power Supply Controller

文件：504.42 Kbytes Page：18 Pages

Dual Adjustable Step-Down Switching Power Supply Controller

文件：504.42 Kbytes Page：18 Pages