Automotive-grade N-channel 40 V, 2.2 m typ., 80 A STripFETTM F7 Power MOSFET in a DPAK package

Features  AEC-Q101 qualified  Among the lowest RDS(on) on the market  Excellent FoM (figure of merit)  Low Crss/Ciss ratio for EMI immunity  High avalanche ruggedness Description This N-channel Power MOSFET utilizes STripFETTM F7 technology with an enhanced trench gate structure th

汽车级N沟道40 V、2.2 mOhm典型值、80 A STripFET F7功率MOSFET，DPAK封装