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STD12NF06价格

参考价格:¥3.5583

型号:STD12NF06L-1 品牌:STMicroelectronics 备注:这里有STD12NF06多少钱,2026年最近7天走势,今日出价,今日竞价,STD12NF06批发/采购报价,STD12NF06行情走势销售排行榜,STD12NF06报价。
型号 功能描述 生产厂家 企业 LOGO 操作
STD12NF06

N-CHANNEL 60V - 0.08 ohm - 12A IPAK/DPAK STripFET??II POWER MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics unique single feature size strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkab

STMICROELECTRONICS

意法半导体

STD12NF06

N-channel 60V - 0.08廓 - 12A - DPAK - IPAK STripFET??II Power MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark

STMICROELECTRONICS

意法半导体

STD12NF06

N-channel 60 V, 0.08廓, 12 A, DPAK, IPAK STripFET??II Power MOSFET

文件:341.77 Kbytes Page:14 Pages

STMICROELECTRONICS

意法半导体

N-channel 60V - 0.08廓 - 12A - DPAK - IPAK STripFET??II Power MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark

STMICROELECTRONICS

意法半导体

N-CHANNEL 60V - 0.08 ohm - 12A IPAK/DPAK STripFET??II POWER MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark

STMICROELECTRONICS

意法半导体

N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 12A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.09Ω(Max)@VGS= 10V APPLICATIONS · Switch Mode Power Supply (SMPS) · Uninterruptible Power Supply (UPS) · Power Factor Correction (PFC)

ISC

无锡固电

Automotive-grade N-channel 60 V, 0.08 Ohm typ., 12 A STripFET(TM) II Power MOSFET in a DPAK package

This Power MOSFET has been developed using STMicroelectronics' unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and compu • AEC-Q101 qualified \n• Exceptional dv/dt capability \n• 100% avalanche tested \n• Low gate charge;

STMICROELECTRONICS

意法半导体

N-channel 60 V, 70 mOhm typ., 12 A, StripFET II Power MOSFET in a DPAK package

This Power MOSFET series has been developed using STMicroelectronics' unique STripFET™ process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom a • Exceptional dv/dt capability \n• 100% avalanche tested \n• Low gate charge;

STMICROELECTRONICS

意法半导体

Automotive-grade N-channel 60 V, 0.07 Ω typ., 12 A, StripFET™ II Power MOSFET in a DPAK package

Features • Designed for automotive applications and AEC-Q101 qualified • Exceptional dv/dt capability • Low gate charge Applications • Switching applications Description This Power MOSFET has been developed using STMicroelectronics’ unique STripFET process, which is specifically designe

STMICROELECTRONICS

意法半导体

丝印代码:D12NF06L;N-channel 60 V, 70 mΩ typ., 12 A, StripFET™ II Power MOSFET in a DPAK package

Features Exceptional dv/dt capability 100 avalanche tested Low gate charge Applications Switching applications Description This Power MOSFET series has been developed using STMicroelectronics' unique STripFET™ process, which is specifically designed to minimize input capacitance and g

STMICROELECTRONICS

意法半导体

Automotive-grade N-channel 60 V, 0.07 Ω typ., 12 A, StripFET™ II Power MOSFET in a DPAK package

Features • Designed for automotive applications and AEC-Q101 qualified • Exceptional dv/dt capability • Low gate charge Applications • Switching applications Description This Power MOSFET has been developed using STMicroelectronics’ unique STripFET process, which is specifically designe

STMICROELECTRONICS

意法半导体

N-channel 60 V, 70 mΩ typ., 12 A, StripFET™ II Power MOSFET in a DPAK package

Features Exceptional dv/dt capability 100 avalanche tested Low gate charge Applications Switching applications Description This Power MOSFET series has been developed using STMicroelectronics' unique STripFET™ process, which is specifically designed to minimize input capacitance and g

STMICROELECTRONICS

意法半导体

N-channel 60V - 0.08廓 - 12A - DPAK - IPAK STripFET??II Power MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark

STMICROELECTRONICS

意法半导体

N沟道60V - 0.08Ohm - 12A - DPAK StripFET(TM) II功率MOSFET

This Power MOSFET is the latest development of STMicroelectronics unique \\\"single feature size\\\" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manu • Exceptional dv/dt capability \n• Low gate charge;

STMICROELECTRONICS

意法半导体

N-channel 60 V, 0.08廓, 12 A, DPAK, IPAK STripFET??II Power MOSFET

文件:341.77 Kbytes Page:14 Pages

STMICROELECTRONICS

意法半导体

N-Channel 60 V (D-S) MOSFET

文件:963.88 Kbytes Page:7 Pages

VBSEMI

微碧半导体

N-channel 60V - 0.08??- 12A - DPAK - IPAK STripFET??II Power MOSFET

文件:323.2 Kbytes Page:14 Pages

STMICROELECTRONICS

意法半导体

N-channel 60V - 0.08??- 12A - DPAK - IPAK STripFET??II Power MOSFET

文件:323.2 Kbytes Page:14 Pages

STMICROELECTRONICS

意法半导体

N-channel 60V - 0.08??- 12A - DPAK - IPAK STripFET??II Power MOSFET

文件:323.2 Kbytes Page:14 Pages

STMICROELECTRONICS

意法半导体

N-Channel 60 V (D-S) MOSFET

文件:963.88 Kbytes Page:7 Pages

VBSEMI

微碧半导体

N-Channel MOSFET uses advanced trench technology

文件:1.33365 Mbytes Page:4 Pages

DOINGTER

杜因特

N-Channel MOSFET uses advanced trench technology

文件:674.95 Kbytes Page:5 Pages

DOINGTER

杜因特

N-Channel 60 V (D-S) MOSFET

文件:1.00669 Mbytes Page:8 Pages

VBSEMI

微碧半导体

N-channel 60V - 0.08??- 12A - DPAK - IPAK STripFET??II Power MOSFET

文件:323.2 Kbytes Page:14 Pages

STMICROELECTRONICS

意法半导体

N-channel 60 V, 0.08廓, 12 A, DPAK, IPAK STripFET??II Power MOSFET

文件:341.77 Kbytes Page:14 Pages

STMICROELECTRONICS

意法半导体

N-Channel 60 V (D-S) MOSFET

文件:1.00534 Mbytes Page:8 Pages

VBSEMI

微碧半导体

N-Channel 60 V (D-S) MOSFET

文件:963.88 Kbytes Page:7 Pages

VBSEMI

微碧半导体

N-channel 60 V, 0.08廓, 12 A, DPAK, IPAK STripFET??II Power MOSFET

文件:341.77 Kbytes Page:14 Pages

STMICROELECTRONICS

意法半导体

N-channel 60 V, 0.08廓, 12 A, DPAK, IPAK STripFET??II Power MOSFET

文件:341.77 Kbytes Page:14 Pages

STMICROELECTRONICS

意法半导体

N-channel 60V - 0.08??- 12A - DPAK - IPAK STripFET??II Power MOSFET

文件:323.2 Kbytes Page:14 Pages

STMICROELECTRONICS

意法半导体

STD12NF06产品属性

  • 类型

    描述

  • Package:

    IPAK

  • Grade:

    Industrial

  • VDSS(V):

    60

  • RDS(on)_max(@ 4.5/5V)(Ω):

    0.12

  • RDS(on)_max(@ VGS=10V)(Ω):

    0.1

  • Drain Current (Dc)_max(A):

    12

  • PTOT_max(W):

    30

  • Qg_typ(nC):

    7.5

更新时间:2026-7-31 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST(意法)
25+
TO-252-2(DPAK)
11580
原装正品现货,原厂订货,可支持含税原型号开票。
ST/意法
25+
TO252
32360
ST/意法全新特价STD12NF06T4即刻询购立享优惠#长期有货
ST/意法
25+
TO252
6590
只做原装
ST/意法
26+
TO-252
12000
只做原装正品
ST
2430+
TO252
8540
只做原装正品假一赔十为客户做到零风险!!
ST(意法)
2602+
TO-252-2(DPAK)
8421
只做原装现货假一罚十!价格最低!只卖原装现货
ST(意法)
25+
TO-252-2(DPAK)
11580
原装正品现货,原厂订货,可支持含税原型号开票。
ST
23+
TO251
6996
只做原装正品现货
ST
24+
TO252
9860
全新原装现货/假一罚百!
ST/意法
2025+
TO252
695
原装进口价格优 请找坤融电子!

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