丝印代码：STC128；TO-92 Plastic-Encapsulate Transistors

FEATURES Low Saturation Medium Current Application Extremely Low Collector Saturation Voltage Suitable for Low Voltage Large Current Drivers High DC Current Gain and Large Current Capability

丝印代码：STC128；TO-92 Plastic-Encapsulate Transistors

FEATURES Low Saturation Medium Current Application Extremely Low Collector Saturation Voltage Suitable for Low Voltage Large Current Drivers High DC Current Gain and Large Current Capability

NPN Silicon Transistor

Features • Low saturation medium current application • Extremely low collector saturation voltage • Suitable for low voltage large current drivers • High DC current gain and large current capability • Low on resistance : RON=0.6Ω(Max.) (IB=1mA)

NPN Silicon Transistor

Features • Low saturation medium current application • Extremely low collector saturation voltage • Suitable for low voltage large current drivers • High DC current gain and large current capability • Low on resistance : RON=0.6Ω(Max.) (IB=1mA)

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Low Saturation Medium Current Application ● Extremely Low Collector Saturation Voltage ● Suitable for Low Voltage Large Current Drivers ● High DC Current Gain and Large Current Capability

NPN Silicon Transistor

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晶体管

NPN Silicon Transistor

Features • Low saturation medium current application • Extremely low collector saturation voltage • Suitable for low voltage large current drivers • High DC current gain and large current capability • Low on resistance : RON=0.6Ω(Max.) (IB=1mA)

NPN Silicon Transistor

Features • Low saturation medium current application • Extremely low collector saturation voltage • Suitable for low voltage large current drivers • High DC current gain and large current capability • Low on resistance : RON=0.6Ω(Max.) (IB=1mA)

NPN Silicon Transistor

Description • High current application Features • Extremely low collector saturation voltage: VCE(sat)=0.1V(Typ.) @ IC=500mA, IB=50mA • Suitable for low voltage large current drivers • High DC current gain and large current capability • Low on resistance : RON=0.6Ω(Max.) @ IB=1

NPN Silicon Transistor

Description\n• High current application • Extremely low collector saturation voltage: VCE(sat)=0.1V(Typ.) @ IC=500mA, IB=50mA\n• Suitable for low voltage large current drivers\n• High DC current gain and large current capability\n• Low on resistance : RON=0.6Ω(Max.) @ IB=1mA ;

Small Signal Transistors

NPN Silicon Transistor

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N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT223 envelope, intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi

Silicon Complementary Transistors Audio Output, Video, Driver

Description: The NTE128 (NPN) and NTE129 (PNP) are silicon complementary transistors in a TO39 type package designed primarily for amplifier and switching applications. These devices features high breakdown voltages, low leakage currents, low capacity, and a beta useful over an extremely wide c

Silicon Complementary Transistors General Purpose Amp

Description: The NTE128P (NPN) and NTE129P (PNP) are silicon complemedntary transistors designed for use in general purpose power amplifier and switching applications. Features: • High VCE Ratings • Exceptional Power Dissipation Capability

Silicon epitaxial planar type

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