位置：首页 > IC中文资料第11754页 > STB7NC70Z
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
STB7NC70Z | N-CHANNEL 700V - 1.1ohm - 6A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH?줚II MOSFET DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested | STMICROELECTRONICS 意法半导体 |   | |
N-CHANNEL 700V - 1.1ohm - 6A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH?줚II MOSFET DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested | STMICROELECTRONICS 意法半导体 | | ||
N-CHANNEL 700V - 1.1ohm - 6A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH?줚II MOSFET DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested | STMICROELECTRONICS 意法半导体 | | ||
N-CHANNEL 700V - 1.1ohm - 6A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH?줚II MOSFET DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested | STMICROELECTRONICS 意法半导体 | | ||
N-CHANNEL 700V - 1.1ohm - 6A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH?줚II MOSFET DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested | STMICROELECTRONICS 意法半导体 | | ||
N-CHANNEL 700V - 1.1ohm - 6A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH?줚II MOSFET DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested | STMICROELECTRONICS 意法半导体 | |
STB7NC70Z产品属性
- 类型
描述
- 型号
STB7NC70Z
- 制造商
STMICROELECTRONICS
- 制造商全称
STMicroelectronics
- 功能描述
N-CHANNEL 700V - 1.1ohm - 6A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH⑩III MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
24+ |
NA/ |
980 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
ST |
1709+ |
TO-263/D2-PAK |
32500 |
普通 |
|||
ST |
0137+ |
TO-263 |
6000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ST |
20+ |
TO-263 |
38560 |
原装优势主营型号-可开原型号增税票 |
|||
ST |
23+ |
TO-263 |
8795 |
||||
ST |
22+ |
TO |
25000 |
只做原装进口现货,专注配单 |
|||
ST |
25+ |
TO-263 |
4500 |
全新原装、诚信经营、公司现货销售! |
|||
ST |
24+ |
TO-263 |
2987 |
只售原装自家现货!诚信经营!欢迎来电! |
|||
ST/意法 |
23+ |
TO-263 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
ST |
17+ |
I2PAK |
6200 |
STB7NC70Z规格书下载地址
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DdatasheetPDF页码索引
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