N-CHANNEL 75V - 0.009 ohm - 75A D2PAK/I2PAK/TO-220 STripFET??II POWER MOSFET

TYPICAL RDS(on) = 0.009Ω EXCEPTIONAL dv/dt CAPABILITY 100 AVALANCHE TESTED LOW THRESHOLD DRIVE DESCRIPTION This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as prim

N-channel 75V - 0.009廓 - 75A - D2PAK STripFET??II Power MOSFET

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N-Channel 80 V (D-S) MOSFET

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N-CHANNEL 75V - 0.009 ohm - 75A D2PAK/I2PAK/TO-220 STripFET??II POWER MOSFET

TYPICAL RDS(on) = 0.009Ω EXCEPTIONAL dv/dt CAPABILITY 100 AVALANCHE TESTED LOW THRESHOLD DRIVE DESCRIPTION This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as prim

N-channel 75V - 0.009廓 - 75A - D2PAK STripFET??II Power MOSFET

文件：334.79 Kbytes Page：13 Pages

N-channel 75V - 0.009廓 - 75A - D2PAK STripFET??II Power MOSFET

文件：334.79 Kbytes Page：13 Pages

HEXFET짰 POWER MOSFET

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at po

Drain Current ?밒D= 80A@ TC=25C

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80A竊?0V N-CHANNEL MOSFET

文件：470.45 Kbytes Page：7 Pages

N-channel 75V - 0.0095廓 - 80A - TO-220 - TO-220FP - D2PAK STripFET??II Power MOSFET

文件：422.45 Kbytes Page：16 Pages

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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