isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 70A@ TC=25℃ ·Drain Source Voltage -VDSS=30V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 9.5mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-CHANNEL 30V - 0.0075 ohm - 70A D2PAK/I2PAK/TO-220 LOW GATE CHARGE STripFET II POWER MOSFET

DESCRIPTION This application specific Power MOSFET is the third genaration of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows the best trade-off between on-resistance and gate charge. When used as high and low side in buck regulators, it gives the

N-channel 30V - 0.0075ohm - 70A - D2PAK - I2PAK - TO-220 Low gate charge STripFET TM II Power MOSFET

General features ■ Conduction losses reduced ■ Switching losses reduced Description This application specific Power MOSFET is the third genaration of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows the best trade-off between on-resistance

N-CHANNEL 30V - 0.008 OHM - 70A D2PAK LOW GATE CHARGE STripFET POWER MOSFET

DESCRIPTION This application specific Power MOSFET is the third genaration of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows the best trade-off between on-resistance and gate charge. When used as high and low side in buck regulators, it gives the

N-CHANNEL 30V - 0.008 OHM - 70A D2PAK LOW GATE CHARGE STripFET POWER MOSFET

N-channel 30V - 0.0075ohm - 70A - D2PAK - I2PAK - TO-220 Low gate charge STripFET TM II Power MOSFET

General features ■ Conduction losses reduced ■ Switching losses reduced Description This application specific Power MOSFET is the third genaration of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows the best trade-off between on-resistance

N-CHANNEL 30V - 0.0075 ohm - 70A D2PAK/I2PAK/TO-220 LOW GATE CHARGE STripFET II POWER MOSFET

DESCRIPTION This application specific Power MOSFET is the third genaration of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows the best trade-off between on-resistance and gate charge. When used as high and low side in buck regulators, it gives the

N-CHANNEL 30V - 0.008ohm - 70A TO-220/I2PAK LOW GATE CHARGE STripFET??POWER MOSFET

DESCRIPTION This application specific Power MOSFET is the third genaration of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows the best trade-off between on-resistance and gate charge. When used as high and low side in buck regulators, it gives the

N-channel 30V - 0.0075ohm - 70A - D2PAK - I2PAK - TO-220 Low gate charge STripFET TM II Power MOSFET

General features ■ Conduction losses reduced ■ Switching losses reduced Description This application specific Power MOSFET is the third genaration of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows the best trade-off between on-resistance

N-CHANNEL 30V - 0.008ohm - 70A TO-220/I2PAK LOW GATE CHARGE STripFET™ POWER MOSFET

N-channel 30V - 0.0075ohm - 70A - D2PAK - I2PAK - TO-220 Low gate charge STripFET TM II Power MOSFET

General features ■ Conduction losses reduced ■ Switching losses reduced Description This application specific Power MOSFET is the third genaration of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows the best trade-off between on-resistance

N-channel 30V - 0.0075ohm - 70A - D2PAK - I2PAK - TO-220 Low gate charge STripFET TM II Power MOSFET

General features ■ Conduction losses reduced ■ Switching losses reduced Description This application specific Power MOSFET is the third genaration of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows the best trade-off between on-resistance