STB4NK60价格

参考价格:¥5.1660

型号:STB4NK60Z-1 品牌:STMicroelectronics 备注:这里有STB4NK60多少钱,2025年最近7天走势,今日出价,今日竞价,STB4NK60批发/采购报价,STB4NK60行情走势销售排行榜,STB4NK60报价。
型号 功能描述 生产厂家 企业 LOGO 操作

N-CHANNEL600V-1.76ohm-4ATO-220/FP/DPAK/IPAK/D2PAK/I2PAK Zener-Protected SuperMESH?줡ower MOSFET

Description These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics SuperMESH™ technology, achieved through optimization of STs well established strip-based PowerMESH™ layout. In addition to a significant reduction in on resistance, this device is designed to

STMICROELECTRONICS

意法半导体

N-channel 600 V - 1.76 廓 - 4 A SuperMESH??Power MOSFET DPAK - D2PAK - IPAK - I2PAK - TO-220 - TO-220FP

Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such ser

STMICROELECTRONICS

意法半导体

N-channel 600 V, 1.76 廓, 4 A SuperMESH??Power MOSFET in DPAK, D2PAK, IPAK, I2PAK, TO-220, TO-220FP

DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such ser

STMICROELECTRONICS

意法半导体

N-channel 600 V - 1.76 廓 - 4 A SuperMESH??Power MOSFET DPAK - D2PAK - IPAK - I2PAK - TO-220 - TO-220FP

Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such ser

STMICROELECTRONICS

意法半导体

N-channel 600 V - 1.76 廓 - 4 A SuperMESH??Power MOSFET DPAK - D2PAK - IPAK - I2PAK - TO-220 - TO-220FP

Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such ser

STMICROELECTRONICS

意法半导体

N-channel 600 V, 1.76 廓, 4 A SuperMESH??Power MOSFET in DPAK, D2PAK, IPAK, I2PAK, TO-220, TO-220FP

DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such ser

STMICROELECTRONICS

意法半导体

N-CHANNEL600V-1.76ohm-4ATO-220/FP/DPAK/IPAK/D2PAK/I2PAK Zener-Protected SuperMESH?줡ower MOSFET

Description These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics SuperMESH™ technology, achieved through optimization of STs well established strip-based PowerMESH™ layout. In addition to a significant reduction in on resistance, this device is designed to

STMICROELECTRONICS

意法半导体

N-channel 600 V, 1.7 Ω typ., 4 A SuperMESH™ Power MOSFETs in I2PAK, D2PAK, IPAK and DPAK packages

Description These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, these devices are designed to ensure

STMICROELECTRONICS

意法半导体

N-channel 600 V, 1.7 Ω typ., 4 A SuperMESH™ Power MOSFETs in I2PAK, D2PAK, IPAK and DPAK packages

Description These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, these devices are designed to ensure

STMICROELECTRONICS

意法半导体

N-channel 600 V, 1.7 Ω typ., 4 A SuperMESH™ Power MOSFETs in I2PAK, D2PAK, IPAK and DPAK packages

Description These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, these devices are designed to ensure

STMICROELECTRONICS

意法半导体

N-Channel 650 V (D-S) MOSFET

文件:1.10288 Mbytes Page:9 Pages

VBSEMI

微碧半导体

N沟道600 V、1.7 Ohm典型值、4 A SuperMESH功率MOSFET,I2PAK封装

STMICROELECTRONICS

意法半导体

N-Channel 650 V (D-S) MOSFET

文件:1.10075 Mbytes Page:9 Pages

VBSEMI

微碧半导体

N沟道600 V、1.7 Ohm典型值、4 A SuperMESH功率MOSFET,D2PAK封装

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 4A@ TC=25℃ · Drain Source Voltage -VDSS= 600V(Min) · Static Drain-Source On-Resistance -RDS(on) = 2Ω(Max) @ VGS=10V DESCRIPTION · Switching applications

ISC

无锡固电

N-channel 600 V, 1.76 廓, 4 A SuperMESH??Power MOSFET in DPAK, D2PAK, IPAK, I2PAK, TO-220, TO-220FP

DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such ser

STMICROELECTRONICS

意法半导体

N-channel 600 V, 1.7 Ω typ., 4 A SuperMESH™ Power MOSFETs in I2PAK, D2PAK, IPAK and DPAK packages

Description These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, these devices are designed to ensure

STMICROELECTRONICS

意法半导体

N-Channel 650 V (D-S) MOSFET

文件:1.08658 Mbytes Page:9 Pages

VBSEMI

微碧半导体

N-Channel 650 V (D-S) MOSFET

文件:1.08656 Mbytes Page:9 Pages

VBSEMI

微碧半导体

STB4NK60产品属性

  • 类型

    描述

  • 型号

    STB4NK60

  • 制造商

    STMICROELECTRONICS

  • 制造商全称

    STMicroelectronics

  • 功能描述

    N-CHANNEL600V-1.76ohm-4ATO-220/FP/DPAK/IPAK/D2PAK/I2PAK Zener-Protected SuperMESH⑩Power MOSFET

更新时间:2025-12-27 22:50:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
23+
原盒原包装
33000
全新原装假一赔十
ST
22+
TO2633 D2Pak (2 Leads + Tab) T
9000
原厂渠道,现货配单
ST
25+
TO-263
4500
全新原装、诚信经营、公司现货销售!
ST专家
25+23+
D2PAK
29517
绝对原装正品全新进口深圳现货
ST/意法
25+
TO-262
32360
ST/意法全新特价STB4NK60Z-1即刻询购立享优惠#长期有货
ST/意法半导体
21+
TO-263-3
8860
只做原装,质量保证
ST
24+
TO-263-3
8750
只做原装/假一赔十/安心咨询
ST/意法
2450+
TO263
6540
只做原厂原装正品终端客户免费申请样品
ST(意法半导体)
24+
I2PAK
7828
支持大陆交货,美金交易。原装现货库存。
ST
17+
TO-262
6200

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