isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 30A@ TC=25℃ ·Drain Source Voltage : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 75mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

isc N-Channel MOSFET Transistor

• FEATURES • With TO-220 packaging • High speed switching • Very high commutation ruggedness • Easy to use • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operationz • APPLICATIONS • PFC stages • LCD & PDP TV • Power supply • Switchi

N-channel 200V - 0.065廓 - 30A - TO-220/TO-247/D2PAK Low gate charge STripFET??Power MOSFET

Description This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency isolated DC-DC converters. Features ■ Gate charge min

N-channel 200V - 0.065 - 30A - TO-220/TO-247/D2PAK Low gate charge STripFET Power MOSFET

文件：392.22 Kbytes Page：16 Pages

N沟道200 V、0.065 Ohm、30 A、D2PAK STripFET(TM)功率MOSFET

N沟道200 V、0.065 Ohm、30 A、D2PAK STripFET(TM)功率MOSFET

Very good manufacturing repeatability

文件：853.43 Kbytes Page：14 Pages