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型号 功能描述 生产厂家 企业 LOGO 操作
STB16NF25

MOSFET N-CH 30V 80A D2PAK

STMICROELECTRONICS

意法半导体

N-channel 250V - 0.195廓 - 13A - DPAK/TO-220/TO-220FP Low gate charge STripFET??II Power MOSFET

Description This Power MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency, high-frequency isolated DC-DC converters for Telec

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 14A@ TC=25℃ ·Drain Source Voltage -VDSS= 250V(Min) ·Static Drain-Source On-Resistance; -RDS(on) = 0.235Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

N-channel 250V - 0.195廓 - 13A - DPAK/TO-220/TO-220FP Low gate charge STripFET??II Power MOSFET

Description This Power MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency, high-frequency isolated DC-DC converters for Telec

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 14A@ TC=25℃ ·Drain Source Voltage -VDSS= 250V(Min) ·Static Drain-Source On-Resistance; -RDS(on) = 0.235Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

N-channel 250V - 0.195廓 - 13A - DPAK/TO-220/TO-220FP Low gate charge STripFET??II Power MOSFET

Description This Power MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency, high-frequency isolated DC-DC converters for Telec

STMICROELECTRONICS

意法半导体

STB16NF25产品属性

  • 类型

    描述

  • 型号

    STB16NF25

  • 功能描述

    MOSFET N-Ch 60 Volt 25 Amp Power Mosfet D2PAK

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2026-5-15 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
STMicroelectronics
25+
N/A
21000
正规渠道,免费送样。支持账期,BOM一站式配齐
STMicroelectronics
25+
N/A
20948
样件支持,可原厂排单订货!
ST
22+
SOT263
20000
公司只做原装 品质保障
ST/意法
08+
TO-263
897
ST
25+
D2PAK
20000
原装,请咨询
ST
25+23+
TO-263
26875
绝对原装正品全新进口深圳现货
ST
26+
TO-263
8795
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订
ST/意法
25+
TO-263
30000
全新原装现货,价格优势
ST
23+
D2PAK
16900
正规渠道,只有原装!
ST
17+
I2PAK
6200

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