| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
STB1306 | SHIELDED SMD POWER INDUCTORS 文件:314.6 Kbytes Page:5 Pages | SUPERWORLD | ||
SHIELDED SMD POWER INDUCTORS 文件:314.6 Kbytes Page:5 Pages | SUPERWORLD | |||
SHIELDED SMD POWER INDUCTORS 文件:314.6 Kbytes Page:5 Pages | SUPERWORLD | |||
SMD Power Inductor | SUPERWORLD | |||
SMD Power Inductor | SUPERWORLD | |||
SHIELDED SMD POWER INDUCTORS 文件:314.6 Kbytes Page:5 Pages | SUPERWORLD | |||
SHIELDED SMD POWER INDUCTORS 文件:314.6 Kbytes Page:5 Pages | SUPERWORLD | |||
SMD Power Inductor | SUPERWORLD | |||
SHIELDED SMD POWER INDUCTORS 文件:314.6 Kbytes Page:5 Pages | SUPERWORLD | |||
SHIELDED SMD POWER INDUCTORS 文件:314.6 Kbytes Page:5 Pages | SUPERWORLD | |||
SHIELDED SMD POWER INDUCTORS 文件:314.6 Kbytes Page:5 Pages | SUPERWORLD | |||
SHIELDED SMD POWER INDUCTORS 文件:314.6 Kbytes Page:5 Pages | SUPERWORLD | |||
SHIELDED SMD POWER INDUCTORS 文件:314.6 Kbytes Page:5 Pages | SUPERWORLD | |||
SHIELDED SMD POWER INDUCTORS 文件:314.6 Kbytes Page:5 Pages | SUPERWORLD | |||
SHIELDED SMD POWER INDUCTORS 文件:314.6 Kbytes Page:5 Pages | SUPERWORLD | |||
SHIELDED SMD POWER INDUCTORS 文件:314.6 Kbytes Page:5 Pages | SUPERWORLD | |||
SHIELDED SMD POWER INDUCTORS 文件:314.6 Kbytes Page:5 Pages | SUPERWORLD | |||
SHIELDED SMD POWER INDUCTORS 文件:314.6 Kbytes Page:5 Pages | SUPERWORLD | |||
Serial Alarm Real Time Clock RTC FEATURES Real time clock counts seconds, minutes, hours, date of the month, month, day of the week, and year with leap year compensation valid up to 2100 96-byte nonvolatile RAM for data storage Two Time of Day Alarms - programmable on combination of seconds, minutes, hours, and day of th | DALLAS | |||
TMOS POWER FET 75 AMPERES The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower RDS(on) capabilities. This advanced high–cell density HDTMOS power FET is des | MOTOROLA 摩托罗拉 | |||
TMOS POWER FET 75 AMPERES 30 VOLTS RDS(on) = 0.0065 OHM This advanced high–cell density HDTMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplie | MOTOROLA 摩托罗拉 | |||
Bridge Diodes Rectifier Diodes 600V | SANKEN 三垦 | |||
Noise shaping filter DAC GENERAL DESCRIPTION The TDA1306T is a dual CMOS digital-to-analog converter with up-sampling filter and noise shaper. The combination of oversampling up to 4fs, noise shaping and continuous calibration conversion ensures that only simple 1st-order analog post-filtering is required. FEATURES Gen | PHILIPS 飞利浦 |
STB1306产品属性
- 类型
描述
- Width (mm):
11.43
- Height (mm):
11.43
- Inductance (µH):
14.8
- DCR (Ω):
113.90
- IDC (mA):
2300
- Isat (mA):
2300
- Packing (Reel):
600
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DdatasheetPDF页码索引
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