HF/VHF/UHF RF power N-channel MOSFET

Features • Excellent thermal stability • Common source push-pull configuration • POUT = 1000 W min. (1200 W typ.) with 24.6 dB gain at 123 MHz • Pulse conditions: 1ms, 10 • In compliance with the 2002/95/EC European directive • ST air-cavity STAC package technology Description The STAC49

封装/外壳：STAC244B 包装：托盘 描述：TRANSISTOR RF MOSF N-CH STAC244B 分立半导体产品 晶体管 - FET，MOSFET - 射频

1200W Pulse - 100V HF/VHF DMOS TRANSISTOR in STAC package

Excellent thermal stability

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HF/VHF/UHF RF power N-channel MOSFET

Features • Excellent thermal stability • Common source push-pull configuration • POUT = 1000 W min. (1200 W typ.) with 24.6 dB gain at 123 MHz • Pulse conditions: 1ms, 10 • In compliance with the 2002/95/EC European directive • ST air-cavity STAC package technology Description The STAC49

Ultralow Power, Low Distortion

GENERAL DESCRIPTION The ADA4940-1/ADA4940-2 are low noise, low distortion fully differential amplifiers with very low power consumption. They are an ideal choice for driving low power, high resolution, high performance SAR and sigma-delta (Σ-Δ) analog-to-digital converters (ADCs) with resolutio

Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4932 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A monolithically integrated Schottky diode in parallel with the

Drywall Punch

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Pneumatic muffler

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N-Channel 30-V (D-S) MOSFET

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