丝印代码：STAC4932；HF/VHF/UHF RF power N-channel MOSFET

Features • Excellent thermal stability • Common source push-pull configuration • POUT = 1000 W min. (1200 W typ.) with 24.6 dB gain at 123 MHz • Pulse conditions: 1ms, 10 • In compliance with the 2002/95/EC European directive • ST air-cavity STAC package technology Description The STAC49

1200W Pulse - 100V HF/VHF DMOS TRANSISTOR in STAC package

The STAC4932B is an N-channel MOS field-effect RF power transistor. It is intended for 100 V pulse applications up to 250 MHz. This device is suitable for use in industrial, scientific and medical applications. The STAC4932B benefits from the latest generation of efficient, patent-pending STAC® pack • Excellent thermal stability\n• Common source push-pull configuration\n• POUT= 1000 W min. (1200 W typ.) with 26 dB gain @ 123 MHz• Pulse conditions: 1 msec - 10%\n• In compliance with the 2002/95/EC European directive\n• ST air-cavity STAC® packaging technology;

Excellent thermal stability

文件：508.8 Kbytes Page：13 Pages

封装/外壳：STAC244B 包装：托盘 描述：TRANSISTOR RF MOSF N-CH STAC244B 分立半导体产品 晶体管 - FET，MOSFET - 射频

HF/VHF/UHF RF power N-channel MOSFET

Features • Excellent thermal stability • Common source push-pull configuration • POUT = 1000 W min. (1200 W typ.) with 24.6 dB gain at 123 MHz • Pulse conditions: 1ms, 10 • In compliance with the 2002/95/EC European directive • ST air-cavity STAC package technology Description The STAC49

TEMPERATURE COMPENSATED ZENER REFERENCE DIODES

• TEMPERATURE COMPENSATED ZENER REFERENCE DIODES • LEADLESS PACKAGE FOR SURFACE MOUNT • 19.2 VOLT NOMINAL ZENER VOLTAGE + 5 • LOW NOISE • DOUBLE PLUG CONSTRUCTION • METALLURGICALLY BONDED

TEMPERATURE COMPENSATED ZENER REFERENCE DIODES

• TEMPERATURE COMPENSATED ZENER REFERENCE DIODES • LEADLESS PACKAGE FOR SURFACE MOUNT • 19.2 VOLT NOMINAL ZENER VOLTAGE + 5 • LOW NOISE • DOUBLE PLUG CONSTRUCTION • METALLURGICALLY BONDED

Surge Clamping, Transient Overvoltage Suppressor Unidirectional

Description: The NTE4900 series of silicon Transient Suppressors designed to protect voltage sensitive components from high energy voltage transients. Transient over voltage suppressor devices have become very important as a consequence of their high surge capability, extremely fast response time

丝印代码：FN；Voltage Detector IC

文件：260.86 Kbytes Page：6 Pages

Low Voltage Detector IC

文件：269.71 Kbytes Page：6 Pages