Excellent thermal stability

Description The STAC2932F is a gold metallized N-channel MOS field-effect RF power transistor, intended for use in 50 V DC large signal applications up to 250 MHz. The STAC2932F benefits from the latest generation of efficient, patent-pending package technology, otherwise known as STAC™. Featur

300W - 50V HF/VHF DMOS in STAC244 Flangeless package

The STAC2932F is a gold metallized N-channel MOS field-effect RF power transistor, intended for use in 50 V DC large signal applications up to 250 MHz.\n The STAC2932F benefits from the latest generation of efficient, patent-pending package technology, otherwise known as STAC™. • Gold metallization\n• Excellent thermal stability\n• Common source push-pull configuration• POUT= 300 W min. with 20 dB gain @ 175 MHz\n• In compliance with the 2002/95/EC European directive\n• ST air cavity packaging technology - STAC™package;

封装/外壳：STAC244F 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS RF PWR N-CH STAC244F 分立半导体产品 晶体管 - FET，MOSFET - 射频

封装/外壳：STAC244F 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS RF PWR N-CH 300W STAC244B 分立半导体产品 晶体管 - FET，MOSFET - 射频

MOSFET N-Channel, Enhancement Mode High Speed Switch

Features: ● Avalanche Rugged Technology ● Rugged Gate Oxide Technology ● Lower Input Capacitance ● Improved Gate Charge ● Extended Safe Operating Area ● Lower RDS(on): 0.071Ω Typ ● Lower Leakage Current: 10µA (Max) @ VDS = 200V

RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs

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HIGH-PERFORMANCE PHASE-LOCKED LOOP

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HIGH-PERFORMANCE PHASE-LOCKED LOOP

文件：418.24 Kbytes Page：24 Pages

RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs

文件：122.99 Kbytes Page：13 Pages