PNP General purpose

External dimensions D • • • STA (10-pin) VCBO –60 V VCEO –60 V VEBO –6 V IC –3 A ICP –6 (PW≤10ms, Du≤50) A

源驱动器用（通用）阵列

硅 PNP 外延型三极管阵列（四合一）\n源驱动器阵列。 ・内置 4 个 PNP 三极管。\n・集电极-发射极之间的饱和电压低;

PNP General purpose

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PNP General purpose

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封装/外壳：10-SIP 包装：卷带（TR） 描述：TRANS 4PNP 60V 3A 10-SIP 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 阵列

PNP General purpose

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High Voltage Transistors(PNP)

High Voltage Transistors PNP Silicon

High Voltage Transistors(PNP Silicon)

High Voltage Transistors PNP Silicon

RF POWER TRANSISTORS NPN SILICON

The RF Line ​​​​​​​NPN Silicon RF Power Transistor Designed primarily for application as a high–power linear amplifier from 2.0 to 30 MHz. • Specified 12.5 Volt, 30 MHz Characteristics — Output Power = 100 W (PEP) Minimum Gain = 10 dB Efficiency = 40 • Intermodulation Distortion @

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planar type For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • New S type package, allowing supply with the radial taping

2.6 mm Series

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