HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON

Description The device is a high voltage NPN transistor in monolithic special Darlington configuration designed for applications such as electronic ignition for small engines (scooters, lawnmowers, chainsaws). Features ■ High voltage special Darlington structure ■ Very rugged bipolar technolog

HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON

NPN Silicon Epitaxial Planar Transistor

for switching and AF amplifier applications. The transistor is subdivided into six groups, D, E, F, G, H and I, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

PNP Silicon Epitaxial Planar Transistor

PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As complementary type the NPN transistor 9013

NPN Silicon Epitaxial Planar Transistor

PNP Silicon Epitaxial Planar Transistor \nfor switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages.\nThe transistor is subdivided into three groups, G, H and I, according to its DC current gain. As\ncomplementary type the NPN transistor 9013 is r

NPN Silicon Epitaxial Planar Transistor

for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As complementary type the PNP transistor 9012 is recommended.

8/16-BIT MCU FAMILY WITH UP TO 64K ROM/OTP/EPROM AND UP TO 2K RAM

GENERAL DESCRIPTION The ST90158 and ST90135 microcontrollers are developed and manufactured by STMicroelectronics using a proprietary n-well CMOS process. Their performance derives from the use of a flexible 256-register programming model for ultra-fast context switching and real-time event respo

8/16-BIT MCU FAMILY WITH UP TO 64K ROM/OTP/EPROM AND UP TO 2K RAM

GENERAL DESCRIPTION The ST90158 and ST90135 microcontrollers are developed and manufactured by STMicroelectronics using a proprietary n-well CMOS process. Their performance derives from the use of a flexible 256-register programming model for ultra-fast context switching and real-time event respo

8/16-BIT MCU FAMILY WITH UP TO 64K ROM/OTP/EPROM AND UP TO 2K RAM

GENERAL DESCRIPTION The ST90158 and ST90135 microcontrollers are developed and manufactured by STMicroelectronics using a proprietary n-well CMOS process. Their performance derives from the use of a flexible 256-register programming model for ultra-fast context switching and real-time event respo

8/16-BIT MCU FAMILY WITH UP TO 64K ROM/OTP/EPROM AND UP TO 2K RAM

GENERAL DESCRIPTION The ST90158 and ST90135 microcontrollers are developed and manufactured by STMicroelectronics using a proprietary n-well CMOS process. Their performance derives from the use of a flexible 256-register programming model for ultra-fast context switching and real-time event respo

8/16-BIT MCU FAMILY WITH UP TO 64K ROM/OTP/EPROM AND UP TO 2K RAM

GENERAL DESCRIPTION The ST90158 and ST90135 microcontrollers are developed and manufactured by STMicroelectronics using a proprietary n-well CMOS process. Their performance derives from the use of a flexible 256-register programming model for ultra-fast context switching and real-time event respo

NPN Silicon Epitaxial Planar Transistor

for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the PNP transistor ST 9015 is recommended. On special request, these transistors can be manufactured in different pin configura

PNP Silicon Epitaxial Planar Transistor

for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the NPN transistor ST 9014 is recommended.

8/16-BIT MCU FAMILY WITH UP TO 64K ROM/OTP/EPROM AND UP TO 2K RAM

GENERAL DESCRIPTION The ST90158 and ST90135 microcontrollers are developed and manufactured by STMicroelectronics using a proprietary n-well CMOS process. Their performance derives from the use of a flexible 256-register programming model for ultra-fast context switching and real-time event respo

8/16-BIT MCU FAMILY WITH UP TO 64K ROM/OTP/EPROM AND UP TO 2K RAM

GENERAL DESCRIPTION The ST90158 and ST90135 microcontrollers are developed and manufactured by STMicroelectronics using a proprietary n-well CMOS process. Their performance derives from the use of a flexible 256-register programming model for ultra-fast context switching and real-time event respo

8/16-BIT MCU FAMILY WITH UP TO 64K ROM/OTP/EPROM AND UP TO 2K RAM

GENERAL DESCRIPTION The ST90158 and ST90135 microcontrollers are developed and manufactured by STMicroelectronics using a proprietary n-well CMOS process. Their performance derives from the use of a flexible 256-register programming model for ultra-fast context switching and real-time event respo

8/16-BIT MCU FAMILY WITH UP TO 64K ROM/OTP/EPROM AND UP TO 2K RAM

GENERAL DESCRIPTION The ST90158 and ST90135 microcontrollers are developed and manufactured by STMicroelectronics using a proprietary n-well CMOS process. Their performance derives from the use of a flexible 256-register programming model for ultra-fast context switching and real-time event respo

8/16-BIT MCU FAMILY WITH UP TO 64K ROM/OTP/EPROM AND UP TO 2K RAM

GENERAL DESCRIPTION The ST90158 and ST90135 microcontrollers are developed and manufactured by STMicroelectronics using a proprietary n-well CMOS process. Their performance derives from the use of a flexible 256-register programming model for ultra-fast context switching and real-time event respo

NPN Silicon Epitaxial Planar Transistor

for switching and AF amplifier applications. The transistor is subdivided into six groups, D, E, F, G, H and I, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

NPN Silicon Epitaxial Planar Transistor

for AM/FM amplifier and local oscillator of FM/VHF tuner applications. The transistor is subdivided into six groups, D, E, F, G, H and I, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

丝印代码：901T；HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER TRANSISTOR

n HIGH VOLTAGE SPECIAL DARLINGTON STRUCTURE n VERY RUGGED BIPOLAR TECHNOLOGY n HIGH OPERATION JUNCTION TEMPERATURE n HIGH DC CURRENT GAIN APPLICATIONS n HIGH RUGGEDNESS ELECTRONIC IGNITION FOR SMALL ENGINES DESCRIPTION The ST901T is a High Voltage NPN silicon transistor in monolithi

High voltage NPN Darlington transistor for ignition coil

Description The device is a high voltage NPN transistor in monolithic special Darlington configuration designed for applications such as electronic ignition for small engines (scooters, lawnmowers, chainsaws). Features ■ High voltage special Darlington structure ■ Very rugged bipolar technolog

HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON

Description The device is a high voltage NPN transistor in monolithic special Darlington configuration designed for applications such as electronic ignition for small engines (scooters, lawnmowers, chainsaws). Features ■ High voltage special Darlington structure ■ Very rugged bipolar technolog

HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER TRANSISTOR

n HIGH VOLTAGE SPECIAL DARLINGTON STRUCTURE n VERY RUGGED BIPOLAR TECHNOLOGY n HIGH OPERATION JUNCTION TEMPERATURE n HIGH DC CURRENT GAIN APPLICATIONS n HIGH RUGGEDNESS ELECTRONIC IGNITION FOR SMALL ENGINES DESCRIPTION The ST901T is a High Voltage NPN silicon transistor in monolithi

双极结型晶体管

丝印代码：J6；TRANSISTOR (NPN)

文件：642.41 Kbytes Page：5 Pages

丝印代码：M6；TRANSISTOR (PNP)

文件：631.62 Kbytes Page：5 Pages

封装/外壳：TO-220-3 包装：散装 描述：TRANS NPN DARL 350V 4A TO220 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-220-3 整包 包装：管件 描述：TRANS NPN DARL 400V 4A TO220FP 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

VHF variable capacitance diode

DESCRIPTION The BB901 is a variable capacitance diode, fabricated in planar technology, and encapsulated in the SOT23 small plastic SMD package. FEATURES • Excellent linearity • Small plastic SMD package • C28: 1 pF; ratio: 13.5 APPLICATIONS • Electronic tuning in satellite tuners • Tunabl

Silicon n-channel dual gate MOS-FETs

DESCRIPTION Enhancement type field-effect transistors in plastic microminiature SOT143 and SOT143R envelopes, with source and substrate interconnected. They are intended for UHF and VHF applications, such as television tuners and professional communications equipment especially suited for low vol

Silicon n-channel dual gate MOS-FETs

DESCRIPTION Enhancement type field-effect transistors in plastic microminiature SOT143 and SOT143R envelopes, with source and substrate interconnected. They are intended for UHF and VHF applications, such as television tuners and professional communications equipment especially suited for low vol

17 dB 40-860 MHz VHF/UHF CATV/MATV AMPLIFIERS

The RF Line VHF/UHF CATV Amplifiers . . . designed for broadband applications requiring low–distortion amplification. Specifically intended for CATV/MATV market requirements. These amplifiers feature ion–implanted arsenic emitter transistors and an all gold metal system. • Specified C

5.0 mm Blue Series

文件：30.4 Kbytes Page：1 Pages