Silicon Dual Power Rectifier

Silicon Dual Power Rectifier ● Glass Passivated Die ● Glass to metal seal construction ● VRRM 200 to 1000V ● 250A Surge Rating ● Available as Common Anode, Common Cathode, or Doubler

SURFACE MOUNT SCHOTTKY BA R RIER RECTIFIER

Specification Features: High Voltage Wide Range Selection, 100V, 150V & 200V High Switching Speed Device Low Forward Voltage Drop Low Power Loss and High Efficiency Guard Ring for Over-voltage Protection High Surge Capability RoHS Compliant Matte Tin(Sn) Lead Finish Terminal Leads Surface

SCHOTTKY RECTIFIER

Features: • 150°C TJ operation • Center tap configuration • Ultralow forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • High frequency operation • Guard ring for enhanced ruggedness and long term reliability •

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

Specification Features: ƒ High Voltage Wide Range Selection, 100V, 150V & 200V ƒ High Switching Speed Device ƒ Low Forward Voltage Drop ƒ Low Power Loss and High Efficiency ƒ Guard Ring for Over-voltage Protection ƒ High Surge Capability ƒ RoHS Compliant ƒ Matte Tin(Sn) Lead Finish ƒ Term

SCHOTTKY RECTIFIER

Features  150'C TJ operation  Ultralow forward voltage drop  High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance  High frequency operation  Guard ring for enhanced ruggedness and long term reliability  Trench MOS Schottky technolo

封装/外壳：TO-220-2 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE SCHOTTKY 100V TO220AC 分立半导体产品 二极管 - 整流器 - 单

Schottky Barrier Rectifier

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Silicon Dual Power Rectifier

肖特基二极管

超低正向肖特基二极管

SCHOTTKY RECTIFIER

Features: • 150 °C TJ operation • Center tap configuration • Ultralow forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • High frequency operation • Guard ring for enhanced ruggedness and long term reliability •

SCHOTTKY RECTIFIER

Features 150 'C TJ operation Ultralow forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability Trench MOS Schottky technology This is

SCHOTTKY RECTIFIER

Features  Ultralow forward voltage drop  Very small conduction losses  Negligible switching losses  Extremely fast switching  Low thermal resistance  Avalanche capability specified  Thin package: 1 mm  This is a Pb − Free Device  All SMC parts are traceable to the wafer lot  Ad

Very small conduction losses

Features: • Ultralow forward voltage drop • Very small conduction losses • Negligible switching losses • Extremely fast switching • Low thermal resistance • Avalanche capability specified • Thin package: 1 mm • This is a Pb − Free Device • All SMC parts are traceable to the wafer lot • A

封装/外壳：TO-220-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE ARRAY SCHOTTKY 100V TO220 分立半导体产品 二极管 - 整流器 - 阵列

30 Amp Schottky Barrier Rectifier 100 Volts

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Rectifier diodes schottky barrier

GENERAL DESCRIPTION Dual, low leakage, platinum barrier schottky rectifier diodes in a plastic envelope featuring low forward voltage drop and absence of stored charge. These devices can withstand reverse voltage transients and have guaranteed reverse surge capability. The devices are intend

30A, 1000V Hyperfast Diode

The RHRG30100 is a hyperfast diode with soft recovery characteristics (trr

30A, 1000V Hyperfast Diode

30A, 1000V Hyperfast Diode The RHRP30100 is a hyperfast diode with soft recovery characteristics (trr

30A, 1000V Ultrafast Diode

The RURG30100 is an ultrafast diode with soft recovery characteristics (trr

30A, 1000V Ultrafast Dual Diode

30A, 1000V Ultrafast Dual Diode The RURH30100CC is an ultrafast dual diode with soft recovery characteristics (trr