NPN Silicon Epitaxial Power Transistor

NPN Silicon Epitaxial Power Transistor For Low-Frequencey Power Amplifiers and Mid-Speed Switching The transistor is subdivided into three groups, M, L and K, according to its DC-DC current gain.

SILICON POWER TRANSISTOR

FEATURES • Large current capacity and low VCE(sat): IC(DC) = 5.0 A, IC(pulse) = 8.0 A VCE(sat) = 0.1 V TYP. (@IC = 2.0 A, IB = 0.2 A) • Large power dissipation TO-126 type power transistor PT = 1.3 W (@Ta = 25°C), 20 W (@Tc = 25°C) • Complementary transistor: 2SB1151

NPN SILICON POWER TRANSISTOR

DESCRIPTION The 2SD1691 is a low VCE(sat) transistor which has a large current capability and wide SOA. It is suitable for DC-DC converter, or driver of solenoid or motor. FEATURES ● Low Collector Saturation Voltage. VCE(sat) = 0.1 V TYP.(@IC/IB = 2.0 A/0.2 A) ● Large Current. IC(DC)

LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT

LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT ■ FEATURES * High Power Dissipation * Complementary to 2SB1151

Silicon NPN Power Transistors

DESCRIPTION ·With TO-126 package ·Complement to type 2SB1151 ·Low saturation voltage ·High total power dissipation:PT=1.3W ·Large current capability and wide SOA APPLICATIONS ·DC-DC converter ·Driver of solenoid or motor

LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT

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