NPN Silicon Epitaxial Planar Transistor

NPN Silicon Epitaxial Planar Transistor RF amplifier applications. The transistor is subdivided into three groups, R, O and Y. according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

NPN Silicon Transistor (RF amplifier)

Description • RF amplifier Features • High current transition frequency fT=550MHz(Typ.), [VCE=6V, IE=-1mA] • Low output capacitance : Cob=1.4pF(Typ.) [VCB=6V, IE=0] • Low base time constant and high gain • Excellent noise response

NPN Silicon Transistor

Description • RF amplifier Features • High current transition frequency fT=550MHz(Typ.), [VCE=6V, IE=-1mA] • Low output capacitance : Cob=1.4pF(Typ.) [VCB=6V, IE=0] • Low base time constant and high gain • Excellent noise response

NPN Silicon Transistor

Description • RF amplifier Features • High transition frequency : fT=550MHz(Typ.) @[VCE=6V, IC=1mA] • Low output capacitance : Cob=1.4pF (Typ.) @[VCB=6V, IE=0] • Low base time constant and high gain • Excellent noise response

NPN Silicon Transistor

Description • RF amplifier Features • High current transition frequency fT=550MHz(Typ.), [VCE=6V, IE=-1mA] • Low output capacitance : Cob=1.4pF(Typ.) [VCB=6V, IE=0] • Low base time constant and high gain • Excellent noise response

NPN Silicon Transistor

Description • RF amplifier Features • High current transition frequency fT=550MHz(Typ.), [VCE=6V, IE=-1mA] • Low output capacitance : Cob=1.4pF(Typ.) [VCB=6V, IE=0] • Low base time constant and high gain • Excellent noise response