NPN Silicon Epitaxial Planar Transistor

NPN Silicon Epitaxial Planar Transistor RF amplifier applications. The transistor is subdivided into three groups, R, O and Y. according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

RF amplifier

Description • RF amplifier Features • High current transition frequency fT=550MHz(Typ.), [VCE=6V, IE=-1mA] • Low output capacitance : Cob=1.4pF(Typ.) [VCB=6V, IE=0] • Low base time constant and high gain • Excellent noise response

TRANSISTOR (NPN)

FEATURES ● RF amplifier ● High current transition frequency fT=550MHz(Typ.), [VCE=6V, IE=-1mA] ● Low output capacitance : Cob=1.4pF(Typ.) [VCB=6V, IE=0] ● Low base time constant and high gain ● Excellent noise response

0.02A , 30V NPN Plastic Encapsulated Transistor

FEATURE • RF amplifier • High current transition frequency fT=550MHz(Typ.), [VCE=6V, IE=-1mA] • Low output capacitance : Cob=1.4pF(Typ.) [VCB=6V, IE=0] • Low base time constant and high gain • Excellent noise response

NPN Silicon Transistor (RF amplifier)

Description • RF amplifier Features • High current transition frequency fT=550MHz(Typ.), [VCE=6V, IE=-1mA] • Low output capacitance : Cob=1.4pF(Typ.) [VCB=6V, IE=0] • Low base time constant and high gain • Excellent noise response

Silicon Epitaxial Planar Transistor

FEATURES ● High current transition frequency ● Low output capacitance:Cob=1.4pF ● Low base time constant and high gain ● Excellent noise response APPLICATIONS ● General small signal amplifier